Abstract
Noncrystalline garnet films of nominal composition Y3Fe5O12 and Y2GdFe5O12 were synthesized by RF sputtering. The AC and DC resistivity data have been discussed in line with the model of Mott and Davis where conduction occurs through excitation of carriers into localized states at the band edges and hopping at energies close to the band tails.
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Rambilas, Bahadur, D. Characterization of RF-sputtered garnet films. Bull. Mater. Sci. 9, 349–353 (1987). https://doi.org/10.1007/BF02744017
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DOI: https://doi.org/10.1007/BF02744017