Radiofrequency spark source mass spectrometric analysis of oxygen in undoped silicon crystals and of carbon in undoped and carbon doped gallium arsenide crystals

Abstract

Radiofrequency spark source mass spectrometry is a reliable and precise analytical method to measure the amount of oxygen in silicon grown by the Czochralski technique from SiO₂ crucibles in the common range from 2ppm(atomic) to 20ppm(atomic) and in silicon grown by the floating zone technique below 0.1ppm(atomic). The technique is also excellent for the measurement of the amount of carbon in semi-insulating gallium arsenide grown under low and high pressure N₂ ambient gas by the B₂O₃ encapsulated Czochralski technique from pyrolytic BN crucibles in the common range from 0.02ppm(atomic) to 0.4ppm(atomic). The results are in rather good agreement with concentrations measured by charged particle activation analysis and consistent with those obtained using other methods.