GaP: Hall mobility

da Silva, E. C. F.

doi:10.1007/978-3-642-23415-6_101

GaP: Hall mobility

Semiconductors - New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds

E. C. F. da Silva²

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Part of the book series: Landolt-Börnstein - Group III Condensed Matter ((LANDOLT 3,volume 44E))

Abstract

This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.

It deals with the Hall mobility of GaP.

Contained Elements: Ga-P

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Volume III/44E

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References

Liu, Z., Kawanami, H., Sakata, I.: Appl. Phys. Lett. 96 (2010) 032106.
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Authors and Affiliations

Laboratorio de Novos Materiais Semicondutores, Universidade de Sao Paulo, Rua do Matao, travessa R, 187, 05508-900, Butanta, Sao Paulo, Sao Paulo, Brazil
E. C. F. da Silva

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E. C. F. da Silva
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Institut für Theoretische Physik, Universität Regensburg, Universitätsstraße 31, 93053, Regensburg, Germany
U. Rössler

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da Silva, E.C.F. (2012). GaP: Hall mobility. In: Rössler, U. (eds) New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds. Landolt-Börnstein - Group III Condensed Matter, vol 44E. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23415-6_101

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DOI: https://doi.org/10.1007/978-3-642-23415-6_101
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-23414-9
Online ISBN: 978-3-642-23415-6

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