Abstract
For the last decades, substantial research has been focused on the development of Silicon Carbide electronic devices thanks to its outperformance over Silicon. A review of the author’s recent results on the microstructure of SiC layers studied by Transmission Electron Microscopy is presented in the current work. Structural defects appearing in epilayers grown by different methods will be presented. The studied samples were grown by different means-from vapour phase techniques such as Physical Vapour Transport, Chemical Vapour Deposition and Sublimation Epitaxy.
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Acknowledgments
This work was supported by the European Commission through the NetFISiC and MANSiC projects (Grant no. PITN-GA-2010-264613 and Grant no. MRTN-CT-2006-035735). The authors would like to thank Dr. M. Syväjärvi and professor R.Yakimova from the Department of Physics, Chemistry and Biology in Linköping University, Dr. G. Ferro from Laboratoire des Multimateriaux et Interfaces in Claude Bernard University in Lyon and D. Chaussende from Laboratoire des Materiaux et Genie, INPG Grenoble, for providing the samples.
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Chandran, N., Andreadou, A., Mantzari, A., Marinova, M., Polychroniadis, E.K. (2014). Micro and Nano Structural Characterization of SiC. In: Polychroniadis, E., Oral, A., Ozer, M. (eds) International Multidisciplinary Microscopy Congress. Springer Proceedings in Physics, vol 154. Springer, Cham. https://doi.org/10.1007/978-3-319-04639-6_1
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DOI: https://doi.org/10.1007/978-3-319-04639-6_1
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