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How Can Chips Live Under Radiation?

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Nyquist AD Converters, Sensor Interfaces, and Robustness

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Abstract

Interactions of different types of radiation in silicon are discussed together with effects on devices. Long-term irradiations cause ‘Total-Ionization-Dose’ degradation and ‘Single Event Effects’ occur when dense ionization upsets a small area in a chip. At the CERN Large Hadron Collider LHC we expect a severe radiation environment, yet sophisticated chips are needed. Some remedies against radiation effects are illustrated. One can use changes in technology, in device geometry, in circuit design or in layout. At system level one can recover loss of functions or data. Trends in CMOS technology call for continuous study of behaviour of new devices under radiation. The increased use of chips for critical functions everywhere imposes study of rare effects of radiation, not only in extreme conditions. With large areas of silicon in operation worldwide, low probabilities do result in real incidents.

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Notes

  1. 1.

    Failures due to inadequate computer programming in some cases seems to happen more frequently and obscure upsets by radiation impacts.

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Acknowledgements

Many people have contributed to the know-how at CERN in radiation effects in chips. Contrary to my original fears, it has been quite possible to meet with many scientists and learn about this subject in open scientific meetings. The IEEE has played an important role from the beginning. It is through these contacts and through the yearly NSREC and RADECS that progress continues to be made.

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Authors and Affiliations

  1. CERN PH Department, CH1211, Genève 23, Switzerland

    Erik H. M. Heijne

  2. IEAP-CTU, Prague, Czech Republic

    Erik H. M. Heijne

  3. NIKHEF, Amsterdam, The Netherlands

    Erik H. M. Heijne

Authors
  1. Erik H. M. Heijne
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Correspondence to Erik H. M. Heijne .

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Editors and Affiliations

  1. , Electrical Engineering, Eindhoven University of Technology, Building/room: Pt 5.08, Eindhoven, 5600, Netherlands

    Arthur H.M. van Roermund

  2. , Department of Physics, University of Milan-Bicocca, Milan, Italy

    Andrea Baschirotto

  3. , Dept. Elektrotechniek, K.U.Leuven, Kardinaal Mercierlaan 94, HEVERLEE, B-3001, Belgium

    Michiel Steyaert

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Heijne, E.H.M. (2013). How Can Chips Live Under Radiation?. In: van Roermund, A., Baschirotto, A., Steyaert, M. (eds) Nyquist AD Converters, Sensor Interfaces, and Robustness. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-4587-6_11

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  • DOI: https://doi.org/10.1007/978-1-4614-4587-6_11

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