Conclusion
Non-volatile memories have become an indispensable part of today’s digital data processing. The quickly growing mobile electronics market especially fuels the demand for these devices. The presented floating-dot memory concept discloses a related and CMOS-compatible alternative with enhanced write/erase endurance compared to FLASH while not demanding severe changes of the manufacturing process at the same time. Here, the charge-storing silicon nano-dots are deposited by a self-organized LPCVD technique. The introduced concept is based on advanced SOI substrates, which exhibit fabrication as well as device advantages and offer higher scaling potential than conventional bulk silicon substrates. The electrical data of the presented examination devices prove the suitability of the floatingdot memory concept and pave the way for enhanced non-volatile memory devices.
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Winkler, O., Baus, M., Lemme, M.C., Rölver, R., Spangenberg, B., Kurz, H. (2005). Floating-dot Memory Transistors on SOI Substrate. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_12
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