This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
J. Paulous and D. A. Antoniadis, “Limitations of quasi-static capacitance models for the MOS transistors”, IEEE Electron Device Lett., vol. EDL-4, pp. 221–224, 1983.
S. Y. Oh, D. E. Ward, R. W. Dutton, “Transient analysis of MOS transistors”, IEEE J. Solid-State Circuits, vol. SC-15, no. 4, pp. 636–643, 1980.
M. Chan et al. “A robust and physical BSIM3 non-quasi-static transient and AC small signal model for circuit simulation,” IEEE Trans. on Electron devices, vol. ED-45, pp. 834–841, 1998.
P. Yang and P. K. Chatterjee, “SPICE modeling for small geometry MOSFET circuits”, IEEE Trans. Computer-Aided Des., vol. CAD-1, pp. 169–182, Oct. 1982.
Y. P. Tsividis and G. Masetti, “Problems in the precision modeling of the MOS transistor for analog applications”, IEEE Trans. Computer-Aided Des., vol. CAD-3, pp. 72–79, Jan. 1984.
T. L. Quarles, SPICE 3 Implementation Guide, Memorandum No. UCB/ ERL M89/42, April, 1989.
R. Singh, A. Juge, R. Joly, and G. Morin, “An investigation into the non-quasi-static effects in MOS devices with an wafer S-parameter techniques, Proc. IEEE Int. Conf. Microelectron Test Structures, Barcelona, Mar. 1993.
Y. Cheng et al., “RF modeling issues of deep-submicron MOSFETs for circuit design,” 1998 International Conference of Solid-state and Integrated Circuit Technology, pp. 416–419, 1998.
M. Bagheri, and Y. Tsividis, “A small signal dc-to-high frequency non-quasi-tatic model for the four-terminal MOSFET valid in all regions of operation”, IEEE Trans. Electron Devices, vol. ED-32, no. 11, pp. 2383–2391, 1985.
H. J. Park, P. K. Ko, and C. Hu, “A charge-conserving non-quasi-static MOSFET model for SPICE transient analysis”, IEDM 87 Technical Digest, pp. 652–655, Dec. 1987.
C. Turchetti, P. Mancini, and G. Masetti, “A CAD-oriented non-quasi-static approach for the transient analysis of MOS IC’s”, IEEE Journal of Solid-State Circuits, vol. SC-21, no. 5, pp. 827–836, 1986.
Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987.
W. C. Elmore, “The transient response of damped linear networks with particular regard to wideband amplifiers”, J. Appl. Phys., vol. 19, no. 1, pp. 55–63, 1948.
J. G. Fossum, H. Jeong, and S. Veeraraghavan, “Significance of the channel-charge partition in the transient MOSFET model”, IEEE Trans. Electron Devices, vol. ED-33, pp. 1621–1623, Oct. 1986.
M. F. Sevat, “On the channel charge division in MOSFET modeling”, ICCAD Tech. Dig., Nov. 1987, pp. 208–210.
B. J. Sheu and P. K. Ko, “Measurement and modeling of short-channel MOS transistor gate capacitances,” IEEE J. Solid-state Circuits,. vol. SC-22, pp. 464–472, 1987.
Y. Cheng et al., BSIM3 version 3.0 User’s Manual, University of California, Berkeley, 1995.
Y. Cheng et al., BSIM3 version 3.1 User’s Manual, University of California, Berkeley, Memorandum No. UCB/ERL M97/2, 1997.
W. Liu et al. BSIM3 version 3.2 User’s Manual, University of California, Berkeley, 1998.
T. Miki, Y. Nakamura, Y. Nishikawa, K. Okada, and Y. Horiba, “A 10bit 50MS/s CMOS D/A Converter with 2.7V power supply”, 1992 Symp. on VLSI Circuits Dig. of Tech. Papers, pp. 92–93, 1992.
S. F. Tin et al., “BSIM3 MOSFET model accuracy for RF circuit simulation,” Proceedings of RAWCON’98, pp. 351–354, 1998.
W. Liu et al., “A CAD-compatible non-quasi-static MOSFET model,” IEDM Tech. Dig., pp. 151–154, 1996.
Rights and permissions
Copyright information
© 2002 Kluwer Academic Publishers
About this chapter
Cite this chapter
(2002). Non-quasi Static (NQS) Model. In: Mosfet Modeling & BSIM3 User’s Guide. Springer, Boston, MA. https://doi.org/10.1007/0-306-47050-0_10
Download citation
DOI: https://doi.org/10.1007/0-306-47050-0_10
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-8575-2
Online ISBN: 978-0-306-47050-9
eBook Packages: Springer Book Archive