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Rashba spin-splitting and ferromagnetic electrodes on InAs

  • Hybrid Quantum Systems
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Book cover Advances in Solid State Physics 40

Part of the book series: Advances in Solid State Physics ((ASSP,volume 40))

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Abstract

We present our work on ferromagnetic electrodes and spinorbit interaction of quasi two-dimensional electron systems (2DES) in III–V narrow-gap semiconductors, both intended for the application in spinpolarized transport experiments. We have prepared permalloy electrodes on InAs and have verified simulated magnetization patterns by magneticforce microscopy at zero external magnetic field. The hysteresis curves and the important magnetization configurations next to the semiconducting channel have been calculated. In 2DES on p-type InAs single crystals and in InAs heterostructures the spin-orbit interaction is studied by magnetotransport. A large Rashba parameter is observed in both materials which can be controlled by an applied gate voltage. This is an important prerequisite for the realization of a transistor based solely on spin effects.

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Authors and Affiliations

  1. Insitut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstraße 11, D-20355, Hamburg

    Guido Meier & Dirk Grundler

Authors
  1. Guido Meier
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  2. Dirk Grundler
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Bernhard Kramer

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© 2000 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Meier, G., Grundler, D. (2000). Rashba spin-splitting and ferromagnetic electrodes on InAs. In: Kramer, B. (eds) Advances in Solid State Physics 40. Advances in Solid State Physics, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108361

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  • DOI: https://doi.org/10.1007/BFb0108361

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-41576-3

  • Online ISBN: 978-3-540-44560-9

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