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Advances in Solid State Physics 38 pp 87–100Cite as

Growth mechanisms of SiC on α-SiC(0001) prepared by solid-source molecular beam epitaxy

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Part of the book series: Advances in Solid State Physics ((ASSP,volume 38))

Abstract

Epitaxial growth of SiC on hexagonal (or α)-SiC(0001) has been performed between 900 and 1 350 °C by means of solid-source molecular beam epitaxy. Our results demonstrate that similar SiC growth mechanisms act in all vapour phase epitaxial techniques. They also show that the control of the Si/C ratio and the super-saturation (S) is essential for the growth mode and the kind of polytype grown. Low temperature (T<1200 °C) deposition on on-axis SiC substrates results in the growth of 3C-SiC, which is significantly improved by an alternating supply of Si and C. On vicinal substrates, a step flow growth mode has been realized at T down to 1 050 °C. In experiments performed at T>1200 °C under near equilibrium conditions, different growth modes and conditions stabilizing the growth of certain polytypes have been found. With a step decrease of S, a step-flow growth mode of both 4H- and 6H-SiC occurs and, depending on the step configuration, we also propose a 1D nucleation at steps edges. At even lower S, homoepitaxial growth of 4H-SiC via 2D nucleation occurs on C-stabilized surfaces.

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Authors and Affiliations

  1. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743, Jena, Germany

    Andreas Fissel, Bernd Schröter & Wolfgang Richter

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  1. Andreas Fissel
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  2. Bernd Schröter
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  3. Wolfgang Richter
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Bernhard Kramer

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© 1999 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Fissel, A., Schröter, B., Richter, W. (1999). Growth mechanisms of SiC on α-SiC(0001) prepared by solid-source molecular beam epitaxy. In: Kramer, B. (eds) Advances in Solid State Physics 38. Advances in Solid State Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107610

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  • DOI: https://doi.org/10.1007/BFb0107610

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