Abstract
F. Braun was the first to report on rectifying properties of metal-semiconductor contacts in 1874. Already in 1938, Schottky explained this behavior by depletion layers on the semiconductor side of such interfaces. But the discussions on the mechanisms that determine the barrier heights are still controversial. One of the reasons for that is because experimental barrier heights were uncritically compared with theoretical results for ideal contacts. First of all, laterally homogeneous contacts have to be considered. Their barrier heights are obtained by extrapolation of barrier-height versus ideality-factor plots to the image-force-controlled ideality factors. The continuum of metal-induced gap states is shown to explain the barrier heights of intimate, abrupt, defect-free, and laterally homogeneous Si, GaAs, GaN, CdTe, and SiC Schottky contacts and, therefore, to be the fundamental mechanism that determines Schottky barrier heights. Other, but then secondary mechanisms are considered in addition.
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© 1999 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Mönch, W. (1999). 125 years of metal-semiconductor contacts: Where do we stand?. In: Kramer, B. (eds) Advances in Solid State Physics 39. Advances in Solid State Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107461
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DOI: https://doi.org/10.1007/BFb0107461
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