Abstract
The need for ever increasing switching speeds and frequency limits of integrated circuits has resulted in growing interests in the use of III–V-semiconductor devices, especially field-effect transistors.
In this paper first the present status of commercially available GaAs-MESFETs (homostructure FET) is described. Then means of improving these devices by shrinking the dimensions and increasing the dopant concentrations are discussed. The possibilities of further improvements by using (AlGa)As/GaAs-heterostructures having a two-dimensional electron gas as channel are explained. Especially the influence of the better transport properties of heterostructures (as compared to homostructures) is discussed. Finally the consequences of higher device speed on integrated circuit performance are demonstrated using a simple circuit example.
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N. Yokoyama, T. Ohnishi, H. Onodera, T. Shinoki, A. Shibatomi, and H. Ishikawa: A GaAs 1K Static RAM Using Tungsten Silicide Gate Self-Aligned Technology. IEEE Journ. Solid State Circ., Vol. SC-18 (1983) No. 5, pp. 520–524.
N. Nakayama, K. Suyama, H. Shimizu, N. Yokoyama, H. Ohnishi, A. Shibatomi, and H. Ishikawa: A GaAs 16×16 Bit Parallel Multiplier. IEEE Journ. Solid State. Circ., Vol. SC-18 (1983) No. 5, pp. 599–603
E. F. Schubert, K. Ploog, H. Dämbkes, and K. Heime: Selectively Doped n-AlxGa1−xAs/GaAs Heterostructures with High-Mobility Two-Dimensional Electron Gas for Field Effect Transistors. Part I. Effect of Parallel Conductance. Appl. Phys. A 33 (1984), pp. 63–76.
K. Lee, M. Shur, T. J. Drummond, and H. Morkoc: Parasitic MESFET in (AlGa) As/GaAs Modulation Doped FETS and MODFET Characterization. IEEE Trans. on Electron Devices, Vol. ED-31 (1984) No. 1, pp. 29–34
E. Constant: Modeling of Sub-Micron Devices. Inst. Phys. Conf. Ser. No. 57 (1980), pp. 141–168.
A. Yoshii, M. Tomizawa, and K. Yokoyama: Accurate Modeling for Submicrometer-Gate Si and GaAs MESFETs Using Two-Dimensional Particle Simulation. IEEE Trans. on Electron Devices, Vol. ED-30 (1983) No. 10, pp. 1376–1380
B. Carnez, A. Cappy, A. Kaszynski, E. Constant, and G. Salmer: Modeling of a Submicrometer Gate Field-Effect Transistor Including Nonstationary Electron Dynamics. Appl. Phys., Vol. 51 (1980) No. 1, pp. 784–790.
E. T. Watkins, J. M. Schellenberg, L. H. Hacket, Y. Yamasaki, and M. Feng: A 60 GHz GaAs FET Amplifier. IEEE MTT-S 1983 Digest, pp. 145–147, June 1983
H. Dämbkes, W. Brockerhoff, K. Heime, and A. Cappy: Improved Short Channel GaAs MESFETs by Use of Higher Doping, Concentration to be publ. in IEEE Trans. on Electron Devices, Vol. ED-31 (1984) No. 7.
L. Loreck, H. Dämbkes, K. Heime, K. Ploog, and G. Weimann: Deep-Level Analysis in (AlGa)As-GaAs 2D-Electron Gas Devices by Means of Low Frequency Noise Measurements. IEEE Electron Devices Letters, Vol. EDL-5 (1984) No. 1, pp. 9–11
K. Hikosaka, T. Mimura, and S. Hiyamizu: Deep Electron Traps in MBE-Grown AlGaAs Ternary Alloy for Heterojunction Devices. Inst. Phys. Conf. Ser. No 63 (1981), pp. 233–238.
B. L. Zhou, K. Ploog, E. Gmelin, X. Q. Zheng, and M. Schulz: Assesment of Persistent-Photoconductivity Centers in MBE-Grown AlxGa1−xAs Using, Capacitance Spectroscopy Measurements. Appl. Phys. A 28 (1982), pp. 223–227
K. Lehovec and R. Zuleeg: Analysis of GaAs FETs for Integrated Logic. IEEE Trans. on Electron Devices, Vol. ED-27 (1980) No. 6, pp. 1074–1091.
R. C. Eden, B. M. Welch, R. Zucca, and S. I. Long: The Prospects for Ultrahigh-Speed VLSI GaAs Digital Logic. IEEE Journ. Solid State Circ., Vol. SC-14 (1979) No. 2, pp. 221–239
C. P. Lee, D. Hou, S. Lee, D. Miller, and R. Anderson: Ultra High Speed Digital Integrated Circuits Using GaAs/GaAlAs High Electron Mobility Transistors. IEEE GaAs IC Symp. 1983, Digest, pp. 162–165
T. Mimura, K. Joshin, and S. Kuroda: Device Modeling of HEMTs. Fujitsu Scient. & Techn. Journal, Vol. 19 (1983) No. 3, pp. 243–278.
R. A. Kiehl, P. G. Flahive, S. H. Wemple, and H. M. Cox: Direct-Coupled GaAs Ring Oscillators with Self-Aligned Gates. IEEE Electron Device Letters, Vol. EDL-3 (1982) No. 11, pp. 325–326
D. Delagebeaudeuf and N. T. Linh: Speed Power in Planar Two-Dimensional Electron Gas FET DCFL Circuit: A Theoretical Approach. Electronics Letters, Vol. 18 (1982) No. 11, pp. 510–512
Y. Awano, K. Tomizawa, N. Hashimume, and M. Kawashima: Monte Carlo Particle Simulation of GaAs Short-Channel MESFETs. Electronics Letters, Vol. 19 (1983) No. 1, pp. 20–21
J. F. Pone, R. C. Castagne, J. P. Courat, and C. Arnodo: Two-Dimensional Particle Modeling of Submicrometer Gate GaAs FETs near Pinchoff. IEEE Trans. on Electron Dev. Vol. ED-29 (1982) No. 8, pp. 1244–1255
H. Dämbkes: Herstellung und Eigenschaften von GaAs Schottky-Gate Feldeffekttransistoren mit Kanälen hoher Elektronenkonzentration. Dissertation, Universität Duisburg, 1983
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© 1984 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Dämbkes, H., Heime, K. (1984). High-speed homo- and heterostructure field-effect transistors. In: Grosse, P. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107455
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DOI: https://doi.org/10.1007/BFb0107455
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