Chapter

Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies

Volume 55 of the series NATO Science Series pp 283-307

Molecular Dynamics Simulation of Thin Film Growth with Energetic Atoms

  • Charles M. GilmoreAffiliated withInstitute for Materials Science Mechanical and Aerospace Engineering The School of Engineering and Applied Science, The George Washington UniversitySurface Modification Branch Materials Science and Technology Division, Naval Research Laboratory
  • , James A. SpragueAffiliated withSurface Modification Branch Materials Science and Technology Division, Naval Research Laboratory

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Abstract

Hyperthermal atoms are deposited upon a substrate in thin film deposition processes. Even when the atoms in the vapor phase are not intentionally accelerated to the substrate, the vapor phase atoms are attracted to the substrate surface with a potential of a few electron volts (eV) because of the interaction between the incoming atom and the substrate. Some deposition processes such as ion beam assisted deposition(IBAD), ion beam deposition (IBD), sputter deposition(S), and plasma enhanced chemical vapor deposition (PECVD)result in ions striking the substrate with energies from 10 to over 100 eV as shown in figure 1 [1].