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Luminescence From Si/Sio2 Nanostructures

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Book cover Towards the First Silicon Laser

Part of the book series: NATO Science Series ((NAII,volume 93))

Abstract

The discovery of the room-temperature luminescence from Si [1] and Ge nanocrystals [4] has stimulated considerable efforts in understanding optical properties of indirect-gap elemental semiconductor nanostructures. In particular, Si nanocrystals are receiving widespread interest because of their high quantum efficiency of light emission at room temperature. The photoluminescence (PL) and electroluminescence (EL) efficiency of crystalline Si (c-Si) nanoparticles have greatly increased in the last decade. Very recently, optical gain and stimulated emission have been reported in silicon nanoparticles [6]. In addition, there have been many different approaches towards useful Si light-emitting materials and devices compatible with current Si microelectronics [8]. The realization of bright Si light-emitting devices and silicon lasers will bring about a revolution in the semiconductor industry. Optical and electronic devices can be fabricated from the same material of silicon, and silicon will be the leading material for the future optoelectronics.

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Authors and Affiliations

  1. Nara Institute of Science and Technolog, Graduate School of Materials Science, 630-0101, Ikoma, Nara, Japan

    Yoshihiko Kanemitsu

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  1. Yoshihiko Kanemitsu
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  1. INFM and Department of Physics, University of Trento, Italy

    Lorenzo Pavesi  & Luca Dal Negro  & 

  2. National Academy of Sciences of Belarus, Minsk, Belarus

    Sergey Gaponenko

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Kanemitsu, Y. (2003). Luminescence From Si/Sio2 Nanostructures. In: Pavesi, L., Gaponenko, S., Dal Negro, L. (eds) Towards the First Silicon Laser. NATO Science Series, vol 93. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0149-6_11

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  • DOI: https://doi.org/10.1007/978-94-010-0149-6_11

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