Abstract
The terahertz (THz) band generally indicates the spectrum range that falls on roughly between the traditional electrical and optical frequency bands. Its definition varies over different sources, but one widely accepted definition is the frequency range of 0.1–10 THz. In terms of the wavelength in free space, it corresponds to the range of 3–0.03 mm. In terms of the more readily accepted band definition in the scientific community, the THz band partly include the millimeter-wave band (1 mm–1 cm, or 30–300 GHz) for the lower side and the infrared band (0.3 mm–750 nm, or 1–400 THz) for the upper boundary, while it covers the entire range of sub-millimeter band (0.1–1 mm, or 300 GHz–3 THz). It is notable that the range includes some scientifically significant points, one example being the frequency that corresponds to a photon energy equal to kT at room temperature (~6.2 THz).
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References
Crowe, T.W., Bishop, W.L., Porterfield, D.W., Hesler, J.L., Weikle II, R.M.: Opening the terahertz window with integrated diode circuits. IEEE J. Solid-State Circuits 40, 2104 (2005)
Pfeiffer, U.R., Ojefors, E., Lisauskas, A., Roskos, H.G.: Opportunities for silicon at mmwave and terahertz frequencies, In: IEEE Bipolar/BiCMOS Circuits Technol. Meet. 149–156 (2008)
Rieh, J.-S., Jagannathan, B., Greenberg, D.R., Meghelli, M., Rylyakov, A., Guarin, F., Yang, Z., Ahlgren, D.C., Freeman, G., Cottrell, P., Harame, D.: SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications. IEEE Trans. Microw. Theory Tech. 52, 2390–2408 (2004)
Rieh, J.-S., Jeon, S., Kim, M.: An overview of integrated THz electronics for communication applications. In: 2011 IEEE 54th International Midwest Symposium on Circuits and Systems (MWSCAS) 1–4 (2011)
Miles, R., Zhang, X.-C., Eisele, H., Krotkus, A.: Terahertz Frequency Detection and Identification of Materials and Objects. Springer, Dordrecht (2007)
Chen, S.-M., Fang, Y.-K., Juang, F.R., Yeh, W.-K., Chao, C.-P., Tseng, H.-C.: Terahertz schottky barrier diodes with various isolation designs for advanced radio frequency applications. Thin Solid Films 519, 471–474 (2010)
Thomas, B., Maestrini, A., Beaudin, G.: A low-noise fixed-tuned 300–360-GHz sub-harmonic mixer using planar schottky diodes. IEEE Microw. Wirel. Compon. Lett. 15, 865–867 (2005)
Karpov, A., Miller, D., Rice, F., Stern, J.A., Bumble, B., LeDuc, H.G., Zmuidzinas, J.: Low noise 1 THz-1.4 THz mixers using Nb/Al-AlN/NbTiN SIS junctions. IEEE Trans. Appl. Supercond. 17, 343–346 (2007)
Khosropanah, P., Gao, J.R., Laauwen, W.M., Hajenius, M., Klapwijk, T.M.: Low noise NbN hot electron bolometer mixer at 4.3 THz. Appl. Phys. Lett. 91, 221111–221111-3 (2007)
J.-S. Rieh and D.-H. Kim.: An overview of semiconductor technologies and circuits for terahertz communication applications, In: 2009 IEEE GLOBECOM Workshops. 1–6 (2009)
Snodgrass W., Hafez, W., Harff, N., Feng, M.: Pseudomorphic InP/InGaAs heterojunction bipolar transistors (PHBTs) experimentally demonstrating fT = 765 GHz at 25C increasing to fT = 845 GHz at −55C. In: Technical Digest of International Electron Devices Meeting. Late news 2006
Kim, D.-H., del Alamo, J.A.: 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz. IEEE Electron Device Lett. 29, 830–833 (2008)
Lai R., Mei, X.B., Deal, W.R., Yoshida, W., Kim, Y.M., Liu, P.H., Lee, J., Uyeda, J., Radisic, V., Lange, M., Gaier, T., Samoska, L., Fung, A.: Sub 50 nm InP HEMT device with Fmax greater than 1 THz. In: IEEE International Electron Devices Meeting. 609–611 (2007)
Geynet, B., Chevalier, P., Vandelle, B., Brossard, F., Zerounian, N., Buczko, M., Gloria, D., Aniel, F., Dambrine G., Danneville, F., Dutartre, D., Chantre, A.: SiGe HBTs featuring fT > 400 GHz at room temperature. In: IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 121–124 (2008)
Heinemann, B., Barth, R., Bolze, D., Drews, J., Fischer, G.G., Fox, A., Fursenko, O., Grabolla T., Haak, U., Knoll, D., Kurps, R., Lisker, M., Marschmeyer, Ru, x, cker, H., Schmidt D., Schmidt J., Schubert, M.A., Tillack B., Wipf, C., D. Wolansky, D.W., Yamamoto, Y.: SiGe HBT technology with fT/fmax of 300 GHz/500 GHz and 2.0 ps CML gate delay. In IEEE International Electron Devices Meeting. 30.5.1–30.5.4 (2010)
Lee, S., Jagannathan, B., Narasimha, S., Chou, A., Zamdmer, N., Johnson, J., Williams, R., Wagner, L., Jonghae Kim, Plouchart, J.O., Pekarik, J., Springer, S., Freeman, G.: Record RF performance of 45-nm SOI CMOS technology. In: IEEE International Electron Devices Meeting. 255–258 (2007)
Deal, W.R., Leong, K., Radisic, V., Sarkozy, S., Gorospe, B., Lee, J., Liu, P.H., Yoshida, W., Zhou, J., Lange, M., Lai, R., Mei, X.B.: Low noise amplification at 0.67 THz using 30 nm InP HEMTs. IEEE Microw. Wirel. Compon. Lett. 21, 368–370 (2011)
Mao, Y., Schmalz, K., Borngräber, J., Scheytt, J.C.: A 245 GHz CB LNA in SiGe. In: Eur. Microw. Integr. Circuits (EuMIC) 224–227 (2011)
Radisic, V., Mei, X.B., Deal, W.R., Yoshida, W., Liu, P.H., Uyeda, J., Barsky, M., Samoska, L., Fung, A., Gaier, T., Lai, R.: Demonstration of sub-millimeter wave fundamental oscillators using 35-nm InP HEMT technology. IEEE Microw. Wirel. Compon. Lett. 17, 223–225 (2007)
Seok, E., Cao, C., Shim, D., Arenas, D.J., Tanner, D.B., Hung C.-M., O, K.K.: A 410 GHz CMOS push–push oscillator with an on-chip patch antenna. In: IEEE International Solid-State Circuits Conference. 472–473 (2008)
Momeni, O., Afshari, E.: High power terahertz and millimeter-wave oscillator design: a systematic approach. IEEE J. Solid-State Circuits 46, 583–597 (2011)
Kallfass, I., Massler, H., Leuther, A., Tessmann, A., Schlechtweg, M.: A 210 GHz dual-gate FET mixer MMIC with >2 dB conversion gain, high LO-to-RF isolation, and low lo-drive requirements. IEEE Microw. Wirel. Compon. Lett. 18, 557–559 (2008)
Pfeiffer, U.R., Ojefors, E., Yan, Z.: A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160 GHz. In: International Solid-State Circuits Conference. 416–417 (2010)
Xu, Z., Gu, Q.J., Wu, Y.-C., Tang, A., Lin, Y.-L., Chen, H.-H., Jou, C., Chang, M.C.F.: D-band CMOS transmitter and receiver for multi-giga-bit/sec wireless data link. In: IEEE Custom Integrated Circuits Conference. 1–4 (2010)
Abbasi, M., Gunnarsson, S.E., Wadefalk, N., Kozhuharov, R., Svedin, J., Cherednichenko, S., Angelov, I., Kallfass, I., Leuther, A., Zirath, H.: Single-chip 220-GHz active heterodyne receiver and transmitter MMICs with on-chip integrated antenna. IEEE Trans. Microw. Theory Tech. 59, 466–478 (2011)
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Rieh, JS., Kim, DH., Kim, K., Kim, H. (2012). Recent Advances in Solid-State Electronic Terahertz Systems. In: Park, GS., et al. Convergence of Terahertz Sciences in Biomedical Systems. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-3965-9_6
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