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Modeling of Dry Etching in Production of MEMS

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Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators

Abstract

A numerical model of dry etching of a cavity below a planar mechanical element (e.g. a mirror or a solid gear) through a set of holes is presented. From simulations using the developed model, it is shown that complex geometries of MEMS devices and low pressure dry etching may lead to limitation of the etching rate by gas transport under mechanical elements related to a strongly inhomogeneous distribution of gas concentration under the planar element; some criteria of distinction between the systems with and without the transport limitation effect are provided. The influence of the operating mode and parameters of the etching reactor is also discussed; the models of well-stirred (continuous-flow) reactor and batch (periodic) reactor are considered.

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References

  1. H. F. Winters and J. W. Coburn, Appl. Phys. Lett. 34, 70 (1979).

    Article  CAS  Google Scholar 

  2. L. R. Arana, N. de Mas, R. Schmidt, A. J. Franz, M. A. Schmidt and K. F. Jensen, J. Micromech. Microeng 17, 384 (2007).

    Article  CAS  Google Scholar 

  3. B. E. Volland, Ph. D. Thesis, University of Kassel, 2004.

    Google Scholar 

  4. V. K. Singh, E. S. G. Shaqfeh, and J. P. McVittie, J. Vac. Sci. Technol. B 10, 1091 (1992).

    Article  CAS  Google Scholar 

  5. I. V. Katardjiev, J. Vac. Sci.Technol. A 7, 3222 (1989).

    CAS  Google Scholar 

  6. R. J. Hoekstra, M. J. Grapperhaus, and M. Kushner, J. Vac. Sci. Technol. A 15, 1913 (1997).

    Article  CAS  Google Scholar 

  7. B. Bahreyni and C. Shafai, J. Vac. Sci. Technol. A 20, 1850 (2002).

    Article  CAS  Google Scholar 

  8. S. Rauf, W. J. Dauksher, S. B. Clemens, and K. H. Smith: J. Vac. Sci. Technol. A 20, 1177 (2002).

    Article  CAS  Google Scholar 

  9. E. S. G. Shaqfeh and C. W. Jurgensen, J. Appl. Phys. 66, 4664 (1989).

    Article  Google Scholar 

  10. H. F. Winters and J. W. Coburn, Appl. Phys. Lett. 55, 2730 (1989).

    Article  Google Scholar 

  11. G. Kokkoris, E. Gogolides, A. G. Boudouvis, J. Appl. Phys. 91, 2697 (2002).

    Article  CAS  Google Scholar 

  12. M. K. Abachev, Yu. P. Baryshev, V. F. Lukichev and A. A. Orlikovsky, Vacuum 43, 565 (1992).

    Article  CAS  Google Scholar 

  13. B. E. Volland, I. W. Rangelow, Microelectronic Engineering 67–68, 338 (2003).

    Article  Google Scholar 

  14. O. Rabinovych, A. Uvarov, D. Filenko, I.W. Rangelow, Appl. Phys. A 81, 1661–1666 (2005).

    Article  CAS  Google Scholar 

  15. L. S. Hong, Y. Shimogaki, H. Komjyama, Thin Solid Films 365 (2000) 176.

    Article  CAS  Google Scholar 

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Author information

Authors and Affiliations

  1. Kintech Lab Ltd, Moscow, 123182, Russia

    Alexander Rusakov, Peter Bystrov, Andrey Knizhnik & Boris Potapkin

  2. RRC “Kurchatov Institute”, Moscow, 123182, Russia

    Boris Potapkin

  3. Kintech Lab Ltd, Kurchatov Sq. 1, 123182, Moscow, Russia

    Alexander Rusakov

Authors
  1. Alexander Rusakov
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  2. Peter Bystrov
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  3. Andrey Knizhnik
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  4. Boris Potapkin
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Corresponding author

Correspondence to Alexander Rusakov .

Editor information

Editors and Affiliations

  1. Qualcomm MEMS Technologies, Inc., Junction Avenue 2581, San Jose, 95134, USA

    Evgeni Gusev

  2. Inst. Advanced Materials Devices &, Nanotechnology, Rutgers University, Taylor Road 610, Piscataway, 08854, USA

    Eric Garfunkel

  3. A.E Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation

    Arthur Dideikin

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Rusakov, A., Bystrov, P., Knizhnik, A., Potapkin, B. (2010). Modeling of Dry Etching in Production of MEMS. In: Gusev, E., Garfunkel, E., Dideikin, A. (eds) Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3807-4_17

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  • DOI: https://doi.org/10.1007/978-90-481-3807-4_17

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  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-3805-0

  • Online ISBN: 978-90-481-3807-4

  • eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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