Abstract
The III-nitride semiconductors doped with RE atoms appear to be excellent materials for thin film optical device applications. The spectral coverage extends from UV to infrared and thus light-emitting devices suitable for full-color displays, solid-state lasers, and optical telecommunication fields are expected. This chapter reviews the current status of electrically pumped light-emitting devices based on RE-doped GaN, such as AC- and/or DC-biased electroluminescent (EL) devices and ‘p-n’ junction based light-emitting diodes. The different excitation mechanisms are reviewed.
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Wakahara, A. (2010). Electroluminescent Devices Using RE-Doped III-Nitrides. In: O’Donnell, K., Dierolf, V. (eds) Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Topics in Applied Physics, vol 124. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-2877-8_4
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DOI: https://doi.org/10.1007/978-90-481-2877-8_4
Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-2876-1
Online ISBN: 978-90-481-2877-8
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