Abstract
The fabrication of p-type ZnO crystal is motivated by the need to develop ZnO semiconductor devices. On the other hand, it is well-known that high-quality nano-sized ZnO crystal can be easily obtained by various crystal growth techniques. Consequently, we tried to grow p-type Sb-doped ZnO nanowires by the chemical vapor deposition under various deposition temperature conditions and investigated their optical properties by photoluminescence (PL) spectroscopy. Multiple emission peaks caused by free excitons, excitons bound to donors and structural defects, and acceptors formed by Sb-doping were observed. The temperature dependence of PL confirmed the existence of acceptor level due to Sb-doping, and the activation energy of the acceptor level was estimated to be 125 meV.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsReferences
K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, T. Okada, Phys. E 40, 2489 (2008)
K. Sakai, K. Noguchi, A. Fukuyama, T. Ikari, T. Okada, Jap. J. Appl. Phys. 48, 085001 (2009)
Ü. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, H. Morkoç, J. Appl. Phys. 98, 041301 (2005)
S. Limpijumnong, S.B. Zhang, S.H. Wei, C.H. Park, Phys. Rev. Lett. 92, 155504 (2004)
T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, Y. Hatanaka, Phys. Stat. Sol. B 229, 911 (2002)
F.X. Xiu, Z. Yang, L.J. Mandalapu, D.T. Zhao, J.L. Liu, Appl. Phys. Lett. 87, 152101 (2005)
B.K. Meyer, H. Alves, D.M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, A.V. Rodina, Phys. Stat. Sol. B 241, 231 (2004)
K. Thonke, T. Gruber, N. Teofilov, R. Schonfelder, A. Waag, R. Sauer, Phys. B 308–310, 945 (2001)
Y. Dongqi, H. Lizhong, Q. Shuangshuang, Z Heqiu, S. Len, and L. Len, J. Phys. D: Appl. Phys. 42 (2009) 055110
D. Hwang, H. Kim, J. Lim, J. Oh, J. Yang, S. Park, K. Kim, D.C. Look, Y.S. Park, Appl. Phys. Lett. 86, 151917 (2005)
F.X. Xiu, Z. Yang, L.J. Mandalapu, D.T. Zhao, J.L. Liu, Appl. Phys. Lett. 87, 252102 (2005)
H. Zhang, L. Hu, Z. Zhao, J. Ma, Y. Qiu, B. Wang, H. Liang, J. Bian, Vacuum 85, 718 (2011)
G. Hong, Z. Mingyu, J. Hong, W. Xuanzhang, Z. Zhiguo, J. Alloys Compd. 464, 234 (2008)
A. Manoogian, J.C. Wooly, Can. J. Phys. 62, 285 (1984)
Y. Chem, D.M. Bagnall, H. Koh, K. Park, K. Hiraga, Z. Zhu, T. Yao, J. Appl. Phys. 84, 3912 (1998)
D.W. Hamby, D.A. Lucca, M.J. Klopfstein, G. Cantwell, J. Appl. Phys. 93, 3214 (2003)
F. Su, W. Wang, K. Ding, G. Li, Y. Liu, A.G. Joly, W. Chen, J. Phys. Chem. Solids 67, 2376 (2006)
Acknowledgments
This work was partially supported by the Special Coordination Funds for Promoting Science and Technology from the Japan Science and Technology Agency, and a Grant-in-Aid by the Ministry of Education, Science, Sports, and Culture.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer India
About this chapter
Cite this chapter
Sakai, K. et al. (2014). Low-Temperature Photoluminescence of Sb-doped ZnO Nanowires Synthesized on Sb-coated Si Substrate by Chemical Vapor Deposition Method. In: Rao, M., Okada, T. (eds) ZnO Nanocrystals and Allied Materials. Springer Series in Materials Science, vol 180. Springer, New Delhi. https://doi.org/10.1007/978-81-322-1160-0_16
Download citation
DOI: https://doi.org/10.1007/978-81-322-1160-0_16
Published:
Publisher Name: Springer, New Delhi
Print ISBN: 978-81-322-1159-4
Online ISBN: 978-81-322-1160-0
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)