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Electronic Transport Properties of Quasicrystalline Thin Films

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Quasicrystals

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 55))

Summary

Quasicrystals are assumed to be electronically stabilized by a HumeRothery type mechanism. This explains most of the peculiar properties of quasicrystals. The stabilization is investigated by electronic transport properties, as they depend sensitively on the stabilizing interaction between the static structure and the conduction electrons.

Thin-film techniques provide samples which are well suited for systematic investigations as a function of composition and structural quality for Al-Cu-Fe and Al-Pd-Re i-phases. For a narrow range of composition, large transport anomalies occur, reaching a metal-insulator transition in thin films of i-Al-Pd-Re. We discuss this in the framework of a resonant scattering of the conduction electrons with the quasicrystalline structure, leading to a reduced electronic mobility and density of states (DOS) at the Fermi energy E F.

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Authors
  1. Roland Haberkern
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Editor information

Editors and Affiliations

  1. Institut für Physik, TU Chemnitz, 09107, Chemnitz, Germany

    Jens-Boie Suck  & Peter Häussler  & 

  2. International University Bremen, Postfach 75 05 61, 28725, Bremen, Germany

    Michael Schreiber

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© 2002 Springer-Verlag Berlin Heidelberg

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Haberkern, R. (2002). Electronic Transport Properties of Quasicrystalline Thin Films. In: Suck, JB., Schreiber, M., Häussler, P. (eds) Quasicrystals. Springer Series in Materials Science, vol 55. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-05028-6_18

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  • DOI: https://doi.org/10.1007/978-3-662-05028-6_18

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-08390-7

  • Online ISBN: 978-3-662-05028-6

  • eBook Packages: Springer Book Archive

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