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Continuous Satellites and Plasmon Satellites: XPS Photoemission in Nearly Free Electron Systems

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Photoelectron Spectroscopy

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 82))

Abstract

As already emphasized, PES is a very valuable technique for understanding the electronic properties of solids. However, its value is intimately connected with the understanding of the screening of the photohole. In metals screening leads to three types of phenomena:

  1. (i)

    The positive charge of the photohole is neutralized by an electron which moves onto the site of the photoemission process1; the energy of the state from which photoemission has occurred is thereby changed (Sect.2.2.3). In metals with narrow bands (f- and d-band metals) the photohole neutralization can take place through various channels (with sp-, d- or f-screening) which leads to satellites (Chap.3).

  2. (ii)

    In the screening process the positive photohole produces excitations in the Fermi sea of conduction electrons. In principle, possible excitation energies range between zero (directly at EF) and the bandwidth of the metal under investigation.

  3. (iii)

    The deexcitation of the photohole leads to quantized excitations in the conduction-electron system, namely to the creation of plasmons. These are called “intrinsic” plasmons, because they are an intrinsic property of the photoemission process. In contrast, “extrinsic” plasmons are excited somewhere else in the solid by the outgoing photoelectron during its travel from the place of the photoexcitation process to the surface.2

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  1. Fachbereich Physik, Universität des Saarlandes, D-66041, Saarbrücken, Germany

    Professor Dr. Stefan Hüfner

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  1. Professor Dr. Stefan Hüfner
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Hüfner, S. (1996). Continuous Satellites and Plasmon Satellites: XPS Photoemission in Nearly Free Electron Systems. In: Photoelectron Spectroscopy. Springer Series in Solid-State Sciences, vol 82. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03209-1_4

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  • DOI: https://doi.org/10.1007/978-3-662-03209-1_4

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