Abstract
In Chap. 2, all of the existing literature regarding these TM-containing deep PL centres in Si has been reviewed; Chap. 4 provides all of the details made available by high-resolution spectroscopy in highly enriched \(^{28}\mathrm{{Si}}\), for both the well known and the newly discovered centres. These details include the atomic composition of the binding centre as revealed by the isotopic fingerprint, and the energies and isotope shifts of the NP transitions, including splittings of the IBE ground state, which results in different electronic transitions. The recorded relative intensities of these transitions indicate whether transitions are (at least partially) forbidden or allowed. Also provided are the energies, FWHM, and, where available, the isotope shifts of low energy pLVM and high energy LVM replicas of the NP transitions.
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Steger, M. (2013). Discussion and Conclusion. In: Transition-Metal Defects in Silicon. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-35079-5_5
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