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Application of NIL in Light-Emitting Diode

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Nanoimprint Lithography: An Enabling Process for Nanofabrication

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Abstract

Light-emitting diode (LED) is a very popular semiconductor diode available today. In the background of the world energy crisis, it has been proved to be highly efficient and energy saving and have a long lifetime. Compared to some conventional lamps, LED has given birth to the new light technology (solid-state lighting). Among them, GaN-LED is widely considered as one of the most promising next-generation light sources due to its reliability, durability, and efficiency. GaN-LED has been widely used in displays, traffic signals, and backlights [1–5]. However, the external quantum efficiency of the GaN-LED is generally much lower than the theoretical expectations due to total internal reflection effect on its surface. Consequently, one of the current essential research interests in this area is to find out methods of enhancing efficiency of GaN-LED. How to enhance efficiency of GaN-LED is a key subject in solid-state light.

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Authors and Affiliations

  1. Shanghai Nanotechnology Promotion Center, Shanghai, People’s Republic of China

    Weimin Zhou

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  1. Weimin Zhou
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Correspondence to Weimin Zhou .

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Zhou, W. (2013). Application of NIL in Light-Emitting Diode. In: Nanoimprint Lithography: An Enabling Process for Nanofabrication. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34428-2_8

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  • DOI: https://doi.org/10.1007/978-3-642-34428-2_8

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-34427-5

  • Online ISBN: 978-3-642-34428-2

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