Abstract
Building high-performance silicon CMOS or III/V devices requires many structural process steps, where a physical layer (dielectric, epitaxial semiconductor, gate electrode, or metal contact) is first deposited across the wafer and then partially removed by a masked or blanket etch process. Whenever possible, the deposition and etch processes are verified by a thickness metrology step. Typically, a latest-generation CMOS process flow contains about 100 thickness measurements, at least during the development of the technology. The metrology method of choice in the semiconductor industry is spectroscopic ellipsometry, because it is fast, non-destructive, and capable of measuring product wafers in small areas (30–50 \(\upmu {}\)m beam diameter) set aside in the scribe grid. This chapter will describe several typical applications of ellipsometry in CMOS and III/V device manufacturing and address capabilities and limitations and how future basic research on optical properties of materials can benefit the industry.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Notes
- 1.
The node length is the dynamical random access memoriy (DRAM) half pitch of transistors for the technology.
References
M.R. Baklanov, K.K. Svitashev, L.V. Semenenko, V.K. Sokolov, Opt. Spektrosk. 39, 362 (1975). [Opt. Spectrosc. (USSR) 39, 205 (1975)]
P. Boháč, L. Jastragic, D. Chvostová, V. Železný, Vacuum 41, 1466 (1990)
C.S. Cook, T. Daly, R. Liu, M. Canonico, Q. Xie, R.B. Gregory, S. Zollner, Thin Solid Films 455–456, 794 (2004)
G.G. Devyatykh, E.M. Dianov, N.S. Karpychev, S.M. Mazzavin, V.M. Mashinskii, V.B. Neustruev, A.V. Nikolaichik, A.M. Prokhorov, A.I. Ritus, N.I. Sokolov, A.S. Yushing, Kvant. Electron. (Moscow) 7, 1563 (1980) [Sov. J. Quantum Electron. 10, 900 (1981)]
N.V. Edwards, in 2003 International Conference on Characterization and Metrology for ULSI Technology, ed. by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald, S. Zollner, R.P. Khosla, E.M. Secula (American Institute of Physics, Melville, 2003), p. 723
A.S. Ferlauto, G.M. Ferreira, J.M. Pearce, C.R. Wronski, R.W. Collins, X. Deng, G. Ganguly, Thin Solid Films 455–456, 388 (2004)
J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas’ev, T. Kauerauf, Ph.J. Roussel, M. Toledano-Luque, M. Cho, R. Degraeve, T. Grasser, L.-Å. Ragnarsson, L. Witters, J. Tseng, S. Takeoka, W.-E. Wang, T.Y. Hoffmann, G. Groeseneken, in 2010 IEEE International Electron Devices Meeting, p. 4.1.1
J. Franco, B. Kaczer, G. Eneman, Ph.J. Roussel, T. Grasser, J. Mitard, L.-Å. Ragnarsson, M. Cho, L. Witters, T. Chiarella, M. Togo, W.-E. Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Goeseneken, in 2011 IEEE International Electron Devices Meeting, p. 18.5.1
B. Greene, Q. Liang, K. Amarnath, Y. Wang, J. Schaeffer, M. Cai, Y. Liang, S. Saroop, J. Cheng, A. Rotondaro, S.-H. Han, R. Mo, K. McStay, S. Ku, R. Pal, M. Kumar, B. Dirahoui, B. Yang, F. Tamweber, W.-H. Lee, M. Steigerwalt, H. Weijtmans, J. Holt, L. Black, S. Samavedam, M. Turner, K. Ramani, D. Lee, M. Belyansky, M. Chowdhury, D. Aimé, B. Min, H. van Meer, H. Yin, K. Chan, M. Angyal, M. Zaleski, O. Ogunsola, C. Child, L. Zhuang, H. Yan, D. Permana, J. Sleight, D. Guo, S. Mittl, D. Ioannou, E. Wu, M. Chudzik, D.-G. Park, D. Brown, S. Luning, D. Mocuta, E. Maciejewski, K. Henson, E. Leobandung, in Proceedings of the 2009 Symposium on VLSI Technology, p. 140
C.M. Herzinger, B. Johs, W.A. McGahan, W. Paulson, Thin Solid Films 313–314, 281 (1998)
C.M. Herzinger, B. Johs, W.A. McGahan, J.A. Woollam, W. Paulson, J. Appl. Phys. 83, 3323 (1998)
R.I. Hegde, D.H. Triyoso, S.B. Samavedam, B.E. White, J. Appl. Phys. 101, 074113 (2007)
J.N. Hilfiker, B. Singh, R.A. Synowicki, C.L. Bungay, in Metrology, Inspection, and Process Control for Microlithography XIV, ed. by N.T. Sullivan, SPIE Proceedings, vol. 3998 (SPIE, Bellingham, 2000), p. 390
Y.Z. Hu, J-Th. Zettler, S. Chongsawangvirod, Y.Q. Wang, E.A. Irene, Appl. Phys. Lett. 61, 1098 (1992)
J. Humlíček, A. Nebojsa, J. Hora, M. Stráský, J. Spousta, T. Šikola, Thin Solid Films 332, 25 (1998)
International Technology Roadmap for Semiconductors, 2011 Edition, http://www.itrs.net
International Technology Roadmap for Semiconductors, 2001 Edition, http://www.itrs.net
G.E. Jellison Jr, in Handbook of Ellipsometry, ed. by H.G. Tompkins, E.A. Irene (Springer, Heidelberg, 2005), p. 237
G.E. Jellison Jr, F.A. Modine, Appl. Phys. Lett. 69, 371 (1996)
G.E. Jellison Jr, S.P. Withrow, J.W. McCamy, J.D. Budai, D. Lubben, M.J. Godbole, Phys. Rev. B 52, 14607 (1995)
G.E. Jellison Jr, F.A. Modine, P. Doshi, A. Rohatgi, Thin Solid Films 313–314, 193 (1998)
J. Li, C. Cismaru, P. Zampardi, A. Wu, E. Babcock, M. Sun, K. Stevens, R. Ramanathan, in The International Conference on Compound Semiconductor Manufacturing Technology, Austin, May 14–17, 2007, p. 177
A.A. Medina, L.S. Abdallah, S. Zollner, (unpublished).
National Technology Roadmap for Semiconductors, 1997 Edition (Semiconductor Industry Association, San. Jose)
L. Pajasová, Czech. J. Phys. B 19, 1265 (1969)
J. Schaeffer, N.V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, R. Rai, J. Baker, S. Voight, J. Electrochem. Soc. 150, F67 (2003)
M. Schubert, V. Gottschalch, C.M. Herzinger, H. Yao, P.G. Snyder, J.A. Woollam, J. Appl. Phys. 77, 3416 (1995)
A. Shimukovitch, P. Sakalas, P. Zampardi, M. Schroter, A. Matulionis, Phys. Status Solidi RRL 4, 335 (2010)
M. Sun, P. Zambardi, 2011 Topical workshop on heterostructure microelectronics. IEICE Trans. Electronics (2011)
M. Sun, P. Zampardi, C. Cismaru, L. Rushin, in The International Conference on Compound Semiconductor Manufacturing Technology, Tampa, 18–21 May 2009, p. 11.2
D.H. Triyoso, R.I. Hegde, S. Zollner, M.E. Ramon, S. Kalpat, R. Gregory, X.-D. Wang, J. Jiang, M. Raymond, R. Rai, D. Werho, D. Roan, B.E. White, P.J. Tobin, J. Appl. Phys. 98, 054104 (2005)
D. Triyoso, R. Liu, D. Roan, M. Ramon, N.V. Edwards, R. Gregory. D. Werho, J. Kulik, G. Tam, E. Irwin, X.-D. Wang, L.B. La, C. Hobbs, R. Garcia, J. Baker, B.E. White, P. Tobin, J. Electrochem. Soc. 151, F220 (2004)
O. Weber, F. Andrieu, J. Mazurier, M. Cassé, X. Garros, C. Leroux, F. Martin, P. Perreau, C. Fenouillet-Béranger, S. Barnola, R. Gassilloud, C. Arvet, O. Thomas. J.-P. Noel, O. Rozeau, M.-A. Jaud, T. Poiroux, D. Lafond, A. Toffoli, F. Allain, C. Tabone, L. Tosti, L. Brévard, P. Lehnen, U. Weber, P.K. Baumann, O. Boissiere, W. Schwarzenbach, K. Bourdelle, B.-Y. Nguyen, F. Bœuf, T. Skotnicki, O. Faynot, in 2010 IEEE International Electron Devices Meeting, p. 3.4.1
B. Winstead, W.J. Taylor, E. Verret, K. Loiko, D. Tekleab, C. Capasso, M. Foisy, S.B. Samavedam, IEEE Electron Device Lett. 28, 719 (2007)
S. Zollner, Model dielectric functions for native oxides on compound semiconductors. Appl. Phys. Lett. 63, 2523 (1993)
S. Zollner, J. Appl. Phys. 90, 515 (2001)
S. Zollner, E. Apen, in Characterization and Metrology for ULSI Technology 2000, ed. by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald, W.M. Bullis, P.J. Smith, E.M. Secula (American Institute of Physics, Melville, 2001), p. 532
S. Zollner, R.B. Gregory, M.L. Kottke, V. Vartanian, X.-D. Wang, D. Theodore, P.L. Fejes, J.R. Conner, M. Raymond, X. Zhu, D. Denning, S. Bolton, K. Chang, R. Noble, M. Jahanbani, M. Rossow, D. Goedeke, S. Filipiak, R. Garcia, D. Jawarani, B. Taylor, B.-Y. Nguyen, P.E. Crabtree, A. Thean, in 2007 International Conference on Frontiers of Characterization and Metrology, ed. by D.G. Seiler, A.C. Diebold, R. McDonald, C.M. Garner, D. Herr, R.P. Khosla, E.M. Secula. AIP Conference Proceedings, vol. 937 (2007) p. 337
S. Zollner, J. Hildreth, R. Liu, P. Zaumseil, M. Weidner, B. Tillack, J. Appl. Phys. 88, 4102 (2000)
S. Zollner, R. Liu, J. Christiansen, W. Chen, K. Monarch, T.-C. Lee, R. Singh, J. Yater, W.M. Paulson, C. Feng, in Amorphous and Microcrystalline Silicon Technology-1998, ed. by R. Schropp, H.M. Branz, M. Hack, I. Shimizu, S. Wagner (Materials Research Society, Pittsburgh, 1998), p. 957
S. Zollner, J.P. Liu, P. Zaumseil, H.J. Osten, A.A. Demkov, Semicond. Sci. Technol. 22, S13 (2007)
S. Zollner, M.G. Sadaka, N.V. Edwards, C.S. Cook, Q. Xie, H.T. Le, J. Hildreth, A.S. Morton, in 2002 GaAs MANTECH Conference, paper 8l
Acknowledgments
This work was carried out over a ten-year period at Motorola (and later Freescale, GlobalFoundries, IBM, and New Mexico State University). The author acknowledges contributions from Mariam Sadaka, Bich-Yen Nguyen, Jamie Schaeffer, Dina Triyoso, Mark Raymond, and many others. The work at New Mexico State University was partially supported by the National Science Foundation (DMR-1104934).
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2013 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Zollner, S. (2013). Spectroscopic Ellipsometry for Inline Process Control in the Semiconductor Industry. In: Losurdo, M., Hingerl, K. (eds) Ellipsometry at the Nanoscale. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-33956-1_18
Download citation
DOI: https://doi.org/10.1007/978-3-642-33956-1_18
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-33955-4
Online ISBN: 978-3-642-33956-1
eBook Packages: EngineeringEngineering (R0)