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Material and Doping Contrast in III/V Nanowires Probed by Kelvin Probe Force Microscopy

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Nanoparticles from the Gasphase

Part of the book series: NanoScience and Technology ((NANO))

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Abstract

We have studied the local surface potential and the voltage drop along individual VLS grown GaAs nanowires using Kelvin probe force microscopy. With the obtained information, we identify a core–shell structure in GaAs/GaP heterostructure nanowires, which we attribute to the difference in radial and vertical growth between the two semiconductor materials. In p-doped GaAs nanowires, qualitative and quantitative doping levels are estimated. Furthermore, we find a better incorporation of the zinc compared to the carbon to realize doping in partially p-doped GaAs nanowires by localizing the doping transitions and estimating the width of their depletion layers. Additionally, the p–n junction can be localized with a resolution better than 50 nm and the bias dependence of the depletion layer width can be studied.

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Acknowledgments

We gratefully acknowledge the financial support by the German Research Foundation (DFG) through the collaborative research centre SFB 445. The authors also thank F.-J. Tegude, W. Prost, I. Regolin, C. Gutsche, and A. Lysov from the Institute of Solid-State Electronics of the University Duisburg-Essen, for the preparation of the nanowires and for helpful discussions.

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Authors and Affiliations

  1. Faculty of Engineering and CENIDE Electronic Materials and Nanodevices, University of Duisburg-Essen, Bismarckstraße 81, 47057, Duisburg, Germany

    Sasa Vinaji, Gerd Bacher & Wolfgang Mertin

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  1. Sasa Vinaji
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  2. Gerd Bacher
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  3. Wolfgang Mertin
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Correspondence to Wolfgang Mertin .

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Editors and Affiliations

  1. , Department of Physics and CeNIDE, University of Duisburg-Essen, Lotharstr. 1, Duisburg, 47048, Germany

    Axel Lorke

  2. , Nanoparticle Process Technology, University of Duisburg-Essen, Lotharstr. 1, Duisburg, 47048, Germany

    Markus Winterer

  3. Institute for Nano Structures, and Technology (NST), University of Duisburg-Essen, Lotharstr. 1, Duisburg, 47048, Germany

    Roland Schmechel

  4. IVG, Institute for Combustion, and Gasdynamics, University of Duisburg-Essen, Lotharstr. 1, Duisburg, 47048, Germany

    Christof Schulz

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Vinaji, S., Bacher, G., Mertin, W. (2012). Material and Doping Contrast in III/V Nanowires Probed by Kelvin Probe Force Microscopy. In: Lorke, A., Winterer, M., Schmechel, R., Schulz, C. (eds) Nanoparticles from the Gasphase. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28546-2_8

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