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Raman Imaging pp 257–299Cite as

Raman Imaging of Grain Orientation, Strain, Crystallinity and Doping Levels in Solar Silicon

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Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 168))

Abstract

Micro-Raman spectroscopy is a method that has been used since the 1960s in solid state physics to investigate orientation of crystals, mechanical stresses, phase changes as well as dopant concentrations in semiconductor materials. Raman spectroscopy measures these effects in crystals via an inelastic interaction of laser light with lattice vibrations. The method probes the material of interest nondestructively without requiring any complex sample preparations. Another beneficial aspect of Micro-Raman spectroscopy is that, compared to many other methods, no expensive vacuum equipment is needed for the measurements.

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Authors and Affiliations

  1. Experimental Department 2, Max-Planck-Institut für Mikrostrukturphysik, Halle, Germany

    M. Becker

  2. Leuchs, Micro- and Nanostructuring, Max-Planck-Institut für die Physik des Lichts, Erlangen, Germany

    G. Sarau & S. Christiansen

  3. Institut für Werkstoffwissenschaften, Lehrstuhl Mikrocharakterisierung, Universität Erlangen-Nürnberg, Erlangen, Germany

    H.P. Strunk

  4. Institut für Photonische Technologien, Jena, Germany

    S. Christiansen

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  1. M. Becker
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Correspondence to M. Becker .

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  1. HORIBA Jobin Yvon S.A.S., rue de Lille 231, Villeneuve d'Ascq, 59650, France

    Arnaud Zoubir

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Becker, M., Sarau, G., Strunk, H., Christiansen, S. (2012). Raman Imaging of Grain Orientation, Strain, Crystallinity and Doping Levels in Solar Silicon. In: Zoubir, A. (eds) Raman Imaging. Springer Series in Optical Sciences, vol 168. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28252-2_9

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