Abstract
In order to investigate the role of self-heating effects on the electrical characteristics of sub-micron devices, we have implemented a Monte Carlo device simulator that includes the self-consistent solution of the heat transport equation, obtained in the framework of Extended Irreversible Thermodynamics. The lattice temperature is fed back into the electron transport solver through temperature-dependent scattering tables. Simulation results for a n + − n − n + diode are shown.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
Wachutka, G.K.: Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling. IEEE Trans. CAD 9(11), 1141–1149 (1990)
Pop, E., Sinha, S., Goodson, K.: Heat generation and transport in nanometer scale transistors. Proc. IEEE 94(8), 1587–1601 (2006)
Sverdrup, P.G., Sinha, S., Asheghi, M., Uma, S., Goodson, K.E.: Measurement of ballistic phonon conduction near hotspots in silicon. Appl. Phys. Lett. 78(21), 3331–3333 (2001)
Jou, D., Casas-Vázquez, J., Lebon, G.: Extended Irreversible Thermodynamics. Springer, Berlin (2001)
Alvarez, F.X., Jou, D.: Memory and nonlocal effects in heat transport: from diffusive to ballistic regimes. Appl. Phys. Lett. 90, 083109 (2007)
Lai, J., Majumdar, A.: Concurrent thermal and electrical modeling of sub-micrometric silicon devices. J. Appl. Phys 79(9), 7353–7361 (1996)
Jacoboni, C., Reggiani, L.: The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Mod. Phys. 55(3), 645–705 (1983)
Rowlette, J.A., Goodson, K.E.: Fully coupled nonequilibrium electronphonon transport in nanometer-scale silicon FETs. IEEE Trans. Elec. Dev. 55, 220–232 (2008)
Sadi, T, Kelsall, R, Pilgrim, N.: Simulation of electron transport in InGaAs/AlGaAs HEMTs using an electrothermal Monte Carlo Method. IEEE Trans. Elec. Dev. 53, 1768–1774 (2006)
Raleva, K., Vasileska, D., Goodnick, S.M., Dzekov, T.: Modeling thermal effects in nano-devices., J. Comp. Electr. 8(3), 226–230 (2007)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2012 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Muscato, O., Di Stefano, V. (2012). Analysis of Self-Heating Effects in Sub-Micron Silicon Devices with Electrothermal Monte Carlo Simulations. In: Günther, M., Bartel, A., Brunk, M., Schöps, S., Striebel, M. (eds) Progress in Industrial Mathematics at ECMI 2010. Mathematics in Industry(), vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-25100-9_8
Download citation
DOI: https://doi.org/10.1007/978-3-642-25100-9_8
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-25099-6
Online ISBN: 978-3-642-25100-9
eBook Packages: Mathematics and StatisticsMathematics and Statistics (R0)