Abstract
In situ ultra high vacuum reflection electron microscopy studies of structural and morphological transformations of silicon surface at condition of sample heating by direct electric current are reviewed. The kinetic instability of the diffusion-linked atomic steps affected by electromigration of adsorbed atoms on atomically clean and gold-deposited silicon (111) surface is studied in temperature range between 850 and 1350°C. Consequent changes of the silicon surface morphology during thermal annealing and gold adsorption were observed as reversible redistribution of regular atomic steps to step bunches and vice versa. Peculiarities of the atomic mechanism of the such morphological transitions observed on atomically clean and gold-deposited silicon surface at enhanced temperatures are discussed.
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Acknowledgments
We wish to acknowledge the valuable assistance in experiments and discussion to Prof. A.L. Aseev. This work has been partly supported by RFBR and by the programs of Ministry of Education and Science of Russian Federation.
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Kosolobov, S., Latyshev, A. (2011). Step Bunching on Silicon Surface Under Electromigration. In: Michailov, M. (eds) Nanophenomena at Surfaces. Springer Series in Surface Sciences, vol 47. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-16510-8_11
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