Abstract
The electroluminescence efficiency of a light emitter is of special interest as this property is a critical parameter for most of the potential applications. Indeed, a lot of research on Si-based light emission is devoted to the EL efficiency enhancement of the corresponding light emitters. Therefore, an independent chapter is devoted to efficiency and related issues, in which the focus is not so much on a detailed description of efficiency properties but more on the different strategies to enhance the efficiency of a specific RE-implanted device. Whereas Sect. 5.1 discusses some general aspects of efficiency, Sect. 5.2 reflects general dependencies of the efficiency, namely those on oxide thickness, host material and the implanted RE element. The strategies for efficiency enhancement outlined in the following are based on the co-implantation of other elements, and consequently, Sect. 5.3–5.5 deal with RE-implanted light emitters co-doped with group IV elements, other RE elements or fluorine.
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© 2010 Springer-Verlag Berlin Heidelberg
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Rebohle, L., Skorupa, W. (2010). Electroluminescence Efficiency. In: Rare-Earth Implanted MOS Devices for Silicon Photonics. Springer Series in Materials Science, vol 142. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-14447-9_5
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DOI: https://doi.org/10.1007/978-3-642-14447-9_5
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Publisher Name: Springer, Berlin, Heidelberg
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Online ISBN: 978-3-642-14447-9
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