Abstract
In an ideal lattice each atom is at its designated position. Deviations from the ideal structure are called defects. In the following, we will briefly discuss the most common defects. The electrical activity of defects will be discussed in Sects. 7.5 and 7.7. For the creation (formation) of a defect a certain free enthalpy Gf D is necessary. At thermodynamical equilibrium a (point) defect density ∝ exp _−Gf D/kT_ will always be present (cf. Sect. 4.2.2).
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
J.M. Bishop, How to Win the Nobel Prize (Harvard University Press, Cambridge, 2003)
G. Busch, Early history of the physics and chemisty of semiconductors - from doubts to fact in a hundred years. Eur. J. Phys. 10, 254–264 (1989)
K.C. Handel, Anf¨ange der halbleiterforschung und -entwicklung. Dargestellt an den Biographien von vier deutschen Halbleiterpionieren, PhD thesis, RWTH Aachen (1999)
S. Bidwell, Proc. Phys. Soc. London 7, 129 (1885)
J.Z. Buchwald, Centaurus 23, 51–99 (1979)
R.S. Ohl, Light-sensitive electric device, US patent 2,402,662, filed 1941, awarded 1946
N. Bernstein, M.J. Mehl, D.A. Papaconstantopoulos, N.I. Papanicolaou, M.Z. Bazant, E. Kaxiras, Phys. Rev. B 62, 4477 (2000)
M.T. Yin, M.L. Cohen, Phys. Rev. Lett. 45, 1004 (1980)
J. Bardeen, W. Shockley, Phys. Rev. 80, 72 (1950)
J.C. Phillips, J.A. Van Vechten, Phys. Rev. Lett. 23, 1115 (1969)
S. Takeuchi, K. Suzuki, Phys. Stat. Sol. (A) 171, 99 (1999)
C. Domke, Ph. Ebert, M. Heinrich, K. Urban, Phys. Rev. Lett. 54, 10288 (1996)
Ph. Ebert, X. Chen, M. Heinrich, M. Simon, K. Urban, M.G. Lagally, Phys. Rev. Lett. 76, 2089 (1996)
R.M. Feenstra, J.M. Woodall, G.D. Pettit, Phys. Rev. Lett. 71, 1176 (1993)
R.B. Capaz, K. Cho, J.D. Joannopoulos, Phys. Rev. Lett. 75, 1811 (1995)
R. Jones, A. Carvalho, J.P. Goss, P.R. Briddon, Mat. Sci Engin. B 159, 112 (2008)
S.J. Clark, Complex structure in tetrahedral semiconductors, PhD Thesis, University of Edinburgh, 1994
M. Lannoo, J. Bourgoin, Point Defects in Semiconductors I (Springer, Berlin, 1981)
S. Lee, G.S. Hwang, Phys. Rev. B 78, 125310 (2008)
H. Bracht, N.A. Stolwijk, H. Mehrer, Phys. Rev. B 52, 16542 (1995)
V. Ranki, K. Saarinen, Phys. Rev. Lett. 93, 255502 (2004)
J. Gebauer, M. Lausmann, F. Redmann, R. Krause-Rehberg, H.S. Leipner, E.R. Weber, Ph. Ebert, Phys. Rev. B 67, 235207 (2003)
F. Morehead, N. Stolwijk, W. Meyberg, U. G¨osele, Appl. Phys. Lett. 42, 690 (1983)
S. Dannefaer, P. Mascher, D. Kerr, Phys. Rev. Lett. 56, 2195 (1986)
P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev. Mod. Phys. 61, 289–384 (1989)
P. Pichler, Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (Springer, Berlin, 2004)
G.D. Watkins, J. Appl. Phys. 103, 106106 (2008)
Y. Shimizu, M. Uematsu, K.M. Itoh, Phys. Rev. Lett. 98, 095901 (2007)
J.-W. Jeong, A. Oshiyama, Phys. Rev. B 64, 235204 (2001)
W. Windl, Appl. Phys. Lett. 92, 202104 (2008)
K.-S. Yoon, C.-O. Wang, J.-H. Yoo, T. Won, J. Korean Phys. Soc. 48, 535 (2006)
X.-Y. Liu, W. Windl, K.M. Beardmore, M.P. Masquelier, Appl. Phys. Lett. 82, 1839 (2003)
L. Rayleigh, Philos. Mag. 4, 521 (1902)
W. Zulehner, Metrologia 31, 255 (1994)
I. Yonenaga, T. Ayuzawa, J. Cryst. Growth 297, 14 (2006)
W.G. Pfann, Techniques of zone melting and crystal growing. Solid State Phys. 4, 423 (1957)
W.C. O’Mara, R.B. Herring, L.P. Hunt (eds.), Handbook of Semiconductor Silicon Technology (Noyes, Berkshire, 1990)
J.J. Dowd, R.L. Rouse, Proc. Phys. Soc. B 66, 60 (1953)
Landolt-B¨ornstein, in New Series, Semiconductors, ed. by O. Madelung, M. Schulz, H. Weiss. Numerical Data and Functional Relationships in Science and Technology, vol. 17 (Springer, Berlin, 1982)
M. Nastasi, J.W. Mayer, Ion Implantation and Synthesis of Materials (Springer, Berlin, 2006)
A. Benninghoven, F.G. Rudenauer, H.W.Werner (eds.), Secondary Ion Mass Spectrometry (John Wiley & Sons, New York, 1987)
S. Uppal, A.F.W. Willoughby, J.M. Bonar, A.G.R. Evans, N.E.B Cowern, R. Morris, M.G. Dowsett, J. Appl. Phys. 90, 4293 (2001)
R.F. Lever, K.W. Brannon, J. Appl. Phys. 69, 6369 (1991)
J.F. Ziegler, J.P. Biersack, M.D. Ziegler, SRIM – The Stopping and Range of Ions in Matter (Lulu Press, Morrisville, 2006)
K. Kimura, Y. Oota, K. Nakajima, T.H. B¨uy¨uklimanli, Curr. Appl. Phys. 3, 9 (2003)
R.Wittmann, Miniaturization Problems in CMOS Technology: Investigation of Doping Profiles and Reliability, PhD Thesis, TU Wien, 2007
J. Yokota, J. Phys. Soc. Jpn. 19, 1487 (1964)
D.A.W. Soarez, C.A. Pimentel, J. Appl. Cryst. 16, 486 (1983)
H.R. Vydyanath, J.S. Lorenzo, F.A. Kr¨oger, J. Appl. Phys. 49, 5928 (1978)
P. De´ak, A. Gali, A. S´olynom, A. Buruzs, Th. Fraunheim, J. Phys.: Condens. Matter 17, S2141–2153 (2005) and references therein
B.P. Uberuaga, G. Henkelman, H. J´onsson, S.T. Dunham, W. Windl, R. Stumpf, Phys. Stat. Sol. (B) 233, 24 (2002)
M.J. Caturla, M.D. Johnson, T.D. de la Rubia, Appl. Phys. Lett. 72, 2736 (1998)
F.A. Trumbore, Bell Syst. Tech. J. 39, 205–33 (1960)
V.E. Borisenko, S.G. Yudin, Phys. Stat. Sol. (A) 101, 123 (1987)
J. Adey, R. Jones, P.R. Briddon, J. Phys.: Condens. Matter 16, 9117 (2004)
S. Fischler, J. Appl. Phys. 33, 1615 (1962)
F.S. Shishiyanu, V.G. Gheorghiu, S.K. Palazov, Phys. Stat. Sol. (A) 40, 29 (1977)
M. Luysberg, R. G¨obel, H. Janning, J. Vac. Sci. Technol. B 12, 2305 (1984)
N.A. Smith, I.R. Harris, B. Cockayne, W.R. MacEwan, J. Cryst. Growth 68, 517 (1984)
J.P. Hirth, A brief history of dislocation theory. Metall. Mat. Transact. A 16, 2085–90 (1985)
S. Kret, Pawel Dłu˙zewski, Piotr Dłu˙zewski, J.-Y. Laval, Philos. Mag. 83, 231 (2003). Also at info.ifpan.edu.pl/SL-1/sl14sub/dys1.htm
A.R. Smith, V. Ramachandran, R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, J.E. Northrup, J. Vac. Sci. Technol. A 16, 1641 (1998)
S.N.G. Chu, W.T. Tsang, T.H. Chiu, A.T. Macrander, J. Appl. Phys. 66, 521 (1989)
J.G. Grabmaier, C.B. Watson, Phys. Stat. Sol. 32, K13 (1969)
M. Horn-von Hoegen, F.K. LeGoues, M. Copel, M.C. Reuter, R.M. Tromp, Phys. Rev. Lett. 67, 1130 (1991)
R.B. Heimann, Aufl¨osung von Kristallen (Springer, Wien, 1975)
K. Sato, M. Shikida, T. Yamashiro, K. Asaumi, Y. Iriye, M. Yamamoto, Sens. Actuat. 73, 131 (1999)
A.F. Bogensch¨utz, ¨ Atzpraxis f¨ur Halbleiter (Carl Hanser, M¨unchen, 1967) (in German)
K. Ishida, H. Kawano, Phys. Stat. Sol. (A) 98, 175 (1986)
J.L. Weyher, J. van de Ven, J. Cryst. Growth 78, 191–217 (1986)
M. K¨ohler, Etching in Microsystem Technology (Wiley-VCH, Weinheim, 1999)
J. Fr¨uhauf, Shape and Functional Elements of the Bulk Silicon Microtechnique: A Manual of Wet-Etched Silicon Structures (Springer, Berlin, 2005)
D.M. Manos, D.L. Flamm (eds.), Plasma Etching: An Introduction (Academic Press, San Diego, 1988)
J.W. Coburn, Plasma etching and reactive ion etching: Fundamentals and Applications. American Vacuum Society Monograph Series (AVS, New York, 1982)
V. Smaminathan, A.S. Jordan, Dislocations in III/V compounds, Semicond. Semimet. 38, 294 (1993)
T. Kamejima, J. Matsui, Y. Seki, H. Watanabe, J. Appl. Phys. 50, 3312 (1979)
L. Wang, W. Jie, Y. Yang, G. Xu, L. Fu, J. Cryst. Growth 310 2810 (2008)
S. Mader, A.E. Blakeslee, Appl. Phys. Lett. 25, 365 (1974)
M. Sato, K. Sumino, K. Hiraga, Phys. Stat. Sol. (A) 68, 567 (1981)
D.J.H. Cockayne, P.B. Hirsch, V. Vitek, Philos. Mag. 31, 105 (1975)
D. Gerthsen, C.B. Carter, Phys. Stat. Sol. (A) 136, 29 (1993)
P. Pirouz, D.J.H. Cockayne, N. Shimada, P. Hirsch, A.R. Lang, Proc. Roy. Soc. London A 386, 241 (1983)
H. Gottschalk, G. Patzer, H. Alexander, Phys. Stat. Sol. (A) 45, 207 (1978)
S. Takeuchi, K. Suzuki, K. Maeda, Philos. Mag. A 50, 171 (1984)
Z. Liliental-Weber, H. Sohn, J. Washburn, Structural defects in epitaxial III/V layers, Semicond. Semimet. 38, 397 (1993)
Y. Hao, G. Meng, Zh.L. Wang, Ch. Ye, L. Zhang, Nano Lett. 6, 1650 (2006)
S. Amelinckx, W. Dekeyser, The structure and properties of grain boundaries. Solid State Phys. 8, 325 (1959)
C.R.M. Grovenor, J. Phys. C: Solid State Phys. 18, 4079–119 (1985)
C. Fontaine, D.A. Smith, Appl. Phys. Lett. 40, 153 (1982)
H. Sawada, H. Ichinose, M. Kohyama, J. Electron Microsc. 51, 353 (2002)
F.L. Vogel, W.G. Pfann, H.E. Corey, E.E. Thomas, Phys. Rev. 90, 489 (1953)
H. F¨oll, www.tf.uni-kiel.de/matwis/amat/def en/index.html
H. F¨oll, D. Ast, Philos. Mag. A 40, 589 (1979)
F. Wolf, W. Mader, Optik 110, Suppl. 8 (1999)
M. Grundmann, A. Krost, D. Bimberg, J. Cryst. Growth 107, 494 (1991)
W. Mader, private communication (2006)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2010 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Grundmann, M. (2010). Defects. In: The Physics of Semiconductors. Graduate Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-13884-3_4
Download citation
DOI: https://doi.org/10.1007/978-3-642-13884-3_4
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-13883-6
Online ISBN: 978-3-642-13884-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)