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Semiconductor Power Devices pp 225–240Cite as

Schottky Diodes

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Abstract

Schottky diode s are unipolar device s, which means that only one type of carrier is available for the current transport. If they are designed for large blocking voltages, the resistance of the base will increase strongly due to the lack of charge carrier modulation, as will be shown in the following. Schottky power diodes have been used for a long time, but in the last years they have gained an increased importance in the medium power range:

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Authors and Affiliations

  1. Faculty of ET/IT Chair Power Electronics and Electromagnetic Compatibility, Chemnitz University of Technology, Reichenhainer Str. 70, D-09126, Chemnitz, Germany

    Prof. Dr. -Ing. Prof. h.c. Josef Lutz

  2. Stoltzestr. 86, D-63262, Neu-Isenburg, Germany

    Prof. Dr. Heinrich Schlangenotto

  3. Semikron Elektronik GmbH & Co. KG, Sigmundstr. 200, D-90431, Nürnberg, Germany

    Dr. Uwe Scheuermann

  4. Faculty of ET&IT Chair Power Generation and Storage Systems (PGS) at E.ON ERC, RWTH Aachen University, Mathieustrasse 6, D-52074, Aachen, Germany

    Prof. Dr. ir. Rik De Doncker

Authors
  1. Prof. Dr. -Ing. Prof. h.c. Josef Lutz
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  2. Prof. Dr. Heinrich Schlangenotto
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  3. Dr. Uwe Scheuermann
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  4. Prof. Dr. ir. Rik De Doncker
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Correspondence to Josef Lutz .

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© 2010 Springer-Verlag Berlin Heidelberg

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Lutz, J., Schlangenotto, H., Scheuermann, U., De Doncker, R. (2010). Schottky Diodes. In: Semiconductor Power Devices. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-11125-9_6

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  • DOI: https://doi.org/10.1007/978-3-642-11125-9_6

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-11124-2

  • Online ISBN: 978-3-642-11125-9

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