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Thermoelectric Power in Ultrathin Films and Quantum Wires Under Large Magnetic Field

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Thermoelectric Power in Nanostructured Materials

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 137))

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Abstract

The asymmetry of the wave-vector space of the charge carriers in semiconductors indicates the fact that in ultrathin films (UFs), the restriction of the motion of the carriers in the direction normal to the film (say, the z–direction) may be viewed as carrier confinement in an infinitely deep 1D rectangular potential well, leading to quantization [known as quantum size effect (QSE)] of the wave vector of the carrier along the direction of the potential well, allowing 2D carrier transport parallel to the surface of the film epitomizing new physical features not exhibited in bulk semiconductors [1–4]. The low-dimensional heterostructures based on various materials are widely explored because of the enhancement of carrier mobility [5]. These properties make such structures befitting for applications in quantum well lasers [6], heterojunction FETs [7, 8], high-speed digital networks [9–12], high-frequency microwave circuits [13], optical modulators [14], optical switching systems [15], and other devices.

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Authors and Affiliations

  1. Deptartment of Electronic Science, University of Calcutta, Acharya Prafulla Chandra Rd. 92, Kolkata, 700 009, India

    Professor Dr. Kamakhya Prasad Ghatak

  2. Center of Electronics Design and Technology Nano Scale Device Research Laboratory, Indian Institute of Science, Bangalore, 560 012, India

    Dr. Sitangshu Bhattacharya

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  1. Professor Dr. Kamakhya Prasad Ghatak
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  2. Dr. Sitangshu Bhattacharya
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Correspondence to Kamakhya Prasad Ghatak .

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Ghatak, K.P., Bhattacharya, S. (2010). Thermoelectric Power in Ultrathin Films and Quantum Wires Under Large Magnetic Field. In: Thermoelectric Power in Nanostructured Materials. Springer Series in Materials Science, vol 137. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-10571-5_2

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