Abstract
Ion implantation of insulating materials generates luminescence, which is routinely used to position an ion beam and, more importantly, provides a powerful diagnostic tool of the host material, both in its initial and in later modified forms. The changes in intensity and emission spectra provide information on the state of the near surface region excited by the ions. The various types of imperfections which exist in the range of the ion beam influence the emission spectra. Signals respond both to original and new defects as well as structures formed during ion implantation. Defect studies are notoriously difficult, as they are always a combination of intrinsic and impurity effects. Current interpretations of defects recognise that many of these features are interlinked.
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Townsend, P. (2009). Box 7: Diagnostic Ion Beam Luminescence. In: Hellborg, R., Whitlow, H., Zhang, Y. (eds) Ion Beams in Nanoscience and Technology. Particle Acceleration and Detection. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-00623-4_16
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DOI: https://doi.org/10.1007/978-3-642-00623-4_16
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