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Oxide and Nitride Semiconductors pp 311–354Cite as

Optical Properties of GaN and ZnO

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Part of the book series: Advances in Materials Research ((ADVSMATERIALS,volume 12))

A brief review on the optical properties of wurtzite ZnO and GaN is presented in this chapter with an emphasis on comparison between the materials. The properties of free excitons and impurity-bound excitons, such as their energetic positions and binding energies, are summarized. The localization energy and the ionization energy of the dominant impurities obtained by emission spectroscopy are also presented. Typical aspects of emissions from donor—acceptor pairs, free-to-bound transition, and deep level recombination are discussed. Several experimental characteristics of the relevant heterostructures, InGaN/GaN and MgZnO/ZnO, are also given below. Basic optical methods characterizing the effects of internal electric fields and carrier-localization are summarized. The unique properties of polarization sensitive emissions from nonpolar films are presented. Based on the valence band structures, the polarization selection rules can be obtained in simpler forms. Some recent reports will also be introduced stating that the anisotropic strain in nonpolar films plays an important role in deciding the polarization selectivity. The results of Raman spectroscopy are summarized in the end, with the emphasis on deciding the residual strain and the carrier concentration.

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  1. Department of Physics, Kongju National University, Kongju, Chungnam, 314-701, Korea

    J. -H. Song

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  1. Center for Interdisciplinary Research, Tohoku University, Aramaki Aza-Aoba, Aoba-ku, Sendai, 980-8578, Japan

    Takafumi Yao

  2. School of Nanoscience and Technology, Chungnam National University, Gung-dong 220, Youseong-gu, Daejeon, 305-764, Republic of Korea

    Soon-Ku Hong

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Song, J.H. (2009). Optical Properties of GaN and ZnO. In: Yao, T., Hong, SK. (eds) Oxide and Nitride Semiconductors. Advances in Materials Research, vol 12. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-88847-5_7

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