Abstract
A general introduction is presented to the recently observed intrinsic non-exponential and excitation intensity-dependent decay of time-resolved photoluminescence from semiconductor quantum dots. The commonly used two-level approximation fails in this situation since it relies on fully correlated carriers. In a semiconductor, however, the correlations are subject to scattering and dephasing processes. Hence, carriers are in general not fully correlated. It is shown that this effect leads to a non-exponential and excitation intensity-dependent decay of photoluminescence. The origin of the phenomenon is discussed in detail for a simplified situation. The full problem is studied numerically on the basis of a microscopic theory that includes Coulomb and carrier-photon correlation effects.
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Wiersig, J., Gies, C., Baer, N., Jahnke, F. (2009). Intrinsic Non-Exponential Decay of Time-Resolved Photoluminescence from Semiconductor Quantum Dots. In: Haug, R. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 48. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85859-1_8
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DOI: https://doi.org/10.1007/978-3-540-85859-1_8
Publisher Name: Springer, Berlin, Heidelberg
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