Abstract
Electron spins in semiconductor quantum dots are considered as elementary building blocks for a new class of devices. Here, we address both static and dynamic properties of such electron spins that are confined in singly charged (In,Ga)As/GaAs self-assembled quantum dots. In particular, we discuss first the g-factor tensor and then turn to the creation of spin coherence. We also discuss how long this spin coherence is maintained against scattering resulting in spin relaxation.
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Greilich, A., Yakovlev, D.R., Bayer, M., Shabaev, A., Efros, A.L. (2009). Electron-Spin Dynamics in Self-Assembled (In,Ga)As/GaAs Quantum Dots. In: Fanciulli, M. (eds) Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures. Topics in Applied Physics, vol 115. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-79365-6_4
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DOI: https://doi.org/10.1007/978-3-540-79365-6_4
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