Abstract
A parallel 3D Monte Carlo simulator for the modelling of electron transport in nano-MOSFETs using the Finite Element Method to solve Poisson equation is presented. The solver is parallelised using a domain decomposition strategy, whereas the MC is parallelised using an approach based on the distribution of the particles among processors. We have obtained a very good scalability thanks to the Finite Element solver, the most computationally intensive stage in self-consistent simulations. The parallel simulator has been tested by modelling the electron transport at equilibrium in a 4 nm gate length double gate MOSFET.
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Aldegunde, M., García-Loureiro, A.J., Kalna, K. (2008). Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs. In: Lirkov, I., Margenov, S., Waśniewski, J. (eds) Large-Scale Scientific Computing. LSSC 2007. Lecture Notes in Computer Science, vol 4818. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-78827-0_11
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DOI: https://doi.org/10.1007/978-3-540-78827-0_11
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