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Defect Formation During Crystal Growth from the Melt

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Book cover Springer Handbook of Crystal Growth

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Abstract

This chapter gives an overview of the important defect types and their origins during bulk crystal growth from the melt. The main thermodynamic and kinetic principles are considered as driving forces of defect generation and incorporation, respectively. Results of modeling and practical in situ control are presented. Strong emphasis is given to semiconductor crystal growth since it is from this class of materials that most has been first learned, the resulting knowledge then having been applied to other classes of material.

The treatment starts with zero-dimensional defect types, i.e., native and extrinsic point defects. Their generation and incorporation mechanisms are discussed. Micro- and macrosegregation phenomena – striations and the effect of constitutional supercooling – are added. The control of dopants by using the nonconservative growth principle is considered. One-dimensional structural disturbances – dislocations and their patterning – are discussed next. The role of high-temperature dislocation dynamics for collective interactions, such as cell structuring and bunching, is shown. In a further section second-phase precipitation and inclusion trapping are discussed. The importance of in situ stoichiometry control is underlined. Finally two special defect types are treated – faceting and twinning. First the interplay between facets and inhomogeneous dopant incorporation, then main factors of twinning including melt structure are outlined.

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Abbreviations

2-D:

two-dimensional

3-D:

three-dimensional

AB:

Abrahams and Burocchi

ACRT:

accelerated crucible rotation technique

AO:

acoustooptic

BGO:

Bi12GeO20

BPS:

Burton–Prim–Slichter

BPT:

bipolar transistor

COP:

crystal-originated particle

CRSS:

critical-resolved shear stress

DD:

dislocation dynamics

DSL:

diluted Sirtl with light

EPD:

etch pit density

FEC:

full encapsulation Czochralski

FET:

field-effect transistor

GGG:

gadolinium gallium garnet

GNB:

geometrically necessary boundary

HB:

horizontal Bridgman

HBT:

heterostructure bipolar transistor

HBT:

horizontal Bridgman technique

HRTEM:

high-resolution transmission electron microscopy

HWC:

hot-wall Czochralski

IDB:

incidental dislocation boundary

IDB:

inversion domain boundary

IR:

infrared

KTN:

potassium niobium tantalate

LD:

laser diode

LEC:

liquid encapsulation Czochralski

LED:

light-emitting diode

LHPG:

laser-heated pedestal growth

LPE:

liquid-phase epitaxy

LST:

laser scattering tomography

LST:

local shaping technique

MBE:

molecular-beam epitaxy

MC:

multicrystalline

MD:

misfit dislocation

MD:

molecular dynamics

ME:

melt epitaxy

ME:

microelectronics

MESFET:

metal-semiconductor field effect transistor

MMIC:

monolithic microwave integrated circuit

MOS:

metal–oxide–semiconductor

NLO:

nonlinear optic

OSF:

oxidation-induced stacking fault

PD:

Peltier interface demarcation

PD:

photodiode

PMNT:

Pb(Mg,Nb)1-x Ti x O3

PVE:

photovoltaic efficiency

PZNT:

Pb(Zn,Nb)1-x Ti x O3

RSS:

resolved shear stress

SI:

semi-insulating

ST:

synchrotron topography

TEM:

transmission electron microscopy

THM:

traveling heater method

UV:

ultraviolet

VB:

valence band

VB:

vertical Bridgman

VCZ:

vapor pressure controlled Czochralski

VGF:

vertical gradient freeze

VLS:

vapor–liquid–solid

YAG:

yttrium aluminum garnet

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    Peter Rudolph

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    Govindhan Dhanaraj Dr.

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    Michael Dudley Dr.

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Rudolph, P. (2010). Defect Formation During Crystal Growth from the Melt. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_6

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