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Point Defects in Stacks of High-κ Metal Oxides on Ge: Contrast with the Si Case

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Advanced Gate Stacks for High-Mobility Semiconductors

Part of the book series: Advanced Microelectronics ((MICROELECTR.,volume 27))

Summary

The results are overviewed of an ESR analysis in combination with an electrical capacitance—voltage and conductance—voltage study of point defects and traps in (100) Ge/GeO x N y /HfO2 and (100)Ge/GeO2 structures. Comparative study suggests drastic differences in the interface defect properties of the (100)Ge/GeO x N y /HfO2 and (100)Ge/GeO2 interfaces from the seemingly isomorphic interfaces of (100)Si with the HfO2 and SiO2. ESR fails to detect dangling bond centers associated with Ge crystal surface atoms — only paramagnetic defects in the near-interfacial Ge oxide or Ge (oxy) nitride layers are observed which show no correlation with the major portion of electrically active traps; their atomic nature remains unknown. In contrast with the amphoteric traps related to the dangling bonds (P b -type centers) commonly observed at the silicon/insulator interfaces, the major component of the Ge/insulator interface trap spectrum comes from slow acceptor states which show no immediate correlation with the observed paramagnetic centers. The influence of thermal passivation in H2 is addressed as well.

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Authors and Affiliations

  1. Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, 3001, Leuven, Belgium

    A. Stesmans & V. V. Afanas’ev

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  1. A. Stesmans
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Editors and Affiliations

  1. National Center for Scientific Research DEMOKRITOS, Patriarchou Grigoriou & Neapoleos, 15310, Aghia Paraskevi, Athens, Greece

    Athanasios Dimoulas

  2. QUALCOMM Inc., 5775 Morehouse Dr., SanDiego, CA, 92121, USA

    Evgeni Gusev

  3. QUALCOMM MEMS Technologies, 2581 Junction Ave., SanJose, CA, 95134, USA

    Evgeni Gusev

  4. Department for Materials Science, Stanford University, McCullogh Building, Stanford, CA, 94305, USA

    Paul C. McIntyre

  5. IMEC, Kapeldreef 75, 3001, Leuven, Belgium

    Marc Heyns

  6. MTM Department, Katholieke Universiteit Leuven, Belgium

    Marc Heyns

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Stesmans, A., Afanas’ev, V.V. (2007). Point Defects in Stacks of High-κ Metal Oxides on Ge: Contrast with the Si Case. In: Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M. (eds) Advanced Gate Stacks for High-Mobility Semiconductors. Advanced Microelectronics, vol 27. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71491-0_9

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  • DOI: https://doi.org/10.1007/978-3-540-71491-0_9

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