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Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

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Book cover Advanced Gate Stacks for High-Mobility Semiconductors

Part of the book series: Advanced Microelectronics ((MICROELECTR.,volume 27))

Summary

We demonstrate III–V compound semiconductor (GaAs, InGaAs, and GaN) based metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 high-permittivity (high-κ) gate dielectric, deposited by atomic layer deposition (ALD). These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, high dielectric breakdown strength, a high short-circuit current-gain cut-off frequency (f T) and maximum oscillation frequency (f MAX), as well as high output power and power added efficiency. ALD is a robust process that enables repeatability and manufacturability for compound semiconductor MOSFETs. In order to contribute to the fundamental understanding of ALD-grown high-κ/III–V gate stack quality, we discuss stack and interface formation mechanisms in detail for Al2O3 and HfO2 gate dielectrics on GaAs.

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Authors and Affiliations

  1. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47906, USA

    P. D. Ye

  2. ASM America, 3440 East University Drive, Phoenix, AZ, 85034, USA

    G. D. Wilk

  3. IBM Semiconductor Research and Development Center (SRDC), T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA

    M. M. Frank

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  1. P. D. Ye
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Editors and Affiliations

  1. National Center for Scientific Research DEMOKRITOS, Patriarchou Grigoriou & Neapoleos, 15310, Aghia Paraskevi, Athens, Greece

    Athanasios Dimoulas

  2. QUALCOMM Inc., 5775 Morehouse Dr., SanDiego, CA, 92121, USA

    Evgeni Gusev

  3. QUALCOMM MEMS Technologies, 2581 Junction Ave., SanJose, CA, 95134, USA

    Evgeni Gusev

  4. Department for Materials Science, Stanford University, McCullogh Building, Stanford, CA, 94305, USA

    Paul C. McIntyre

  5. IMEC, Kapeldreef 75, 3001, Leuven, Belgium

    Marc Heyns

  6. MTM Department, Katholieke Universiteit Leuven, Belgium

    Marc Heyns

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Ye, P.D., Wilk, G.D., Frank, M.M. (2007). Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics. In: Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M. (eds) Advanced Gate Stacks for High-Mobility Semiconductors. Advanced Microelectronics, vol 27. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71491-0_16

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  • DOI: https://doi.org/10.1007/978-3-540-71491-0_16

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