This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
Borenstein, J.T., Corbett, J.W., Pearton, S.J.: Kinetic model for hydrogen reactions in boron-doped silicon. J. Appl. Phys. 73, 2751 (1993)
Bruel, M., Aspar, B., Charlet, B., Maleville, C., Poumeyrol, T., Soubie, A., Auberton- Herve, A.J., Lamure, J.M., Barge, T., Metral, F., Trucchi, S.: ‘Smart cut’: a promising new SOI material technology, p.178. Proc. IEEE Tucson, Arizona. Piscataway, NJ (1995)
Capizzi, M., Mittiga, A.: Hydrogen in crystalline silicon: a deep donor? Appl. Phys. Lett. 50, 918 (1987)
Cerofolini, G.F., Meda, L., Balboni, R., Corni, F., Frabboni, S., Ottaviani, G., Tonini, R., Anderle, M., Canteri, R.: Hydrogen-related complexes as the stressing species in high- fluence, hydrogen-implanted, single-crystal silicon. Phys. Rev. B 46, 2061 (1992).
Chabal, Y.L., Weldon, M.K., Caudano, Y., Stefanov, B.B., Raghavachari, K.: Spectro- scopic studies of H-decorated interstitials and vacancies in thin-film silicon exfoliation. Physica B 273-274, 152 1999
Chu, W.K., Kastl, R.H., Lever, R.F., Mader, S., Masters, B.J.: Distribution of irradiation damage in silicon bombarded with hydrogen. Phys. Rev B, 16, 3851 (1977)
Höchbauer, T., Nastasi, M., Mayer, J.W.: Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon. Appl. Phys. Lett. 75, 3938 (1999)
Höchbauer, T., Misra, A., Verda, R., Nastasi, M., Mayer, J.W., Zheng, Y., Lau, S.S.: Hydrogen-implantation induced silicon surface layer exfoliation. Phil Mag. B 80, 1921 (2000)
Höchbauer, T., Misra, A., Nastasi, M., Mayer, J.W.: Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation. J. Appl. Phys. 89, 5980 (2001)
Ichimiya, T., Furuichi, A.: On solubility and diffusion coefficient of tritium in single crystals of silicon. Int. J. Appl. Rad. Isot. 19, 573 (1968)
Johnson, N.M, Burnham, R.D., Street, R.A., Thornton, R.L.: Hydrogen passivation of shallow-acceptor impurities in para-type GaAs. Phys. Rev. B 33, 1102 (1986).
Johnson, N.M, Ponce, F.A., Street, R.A., Nemanich, R.J.: Defects in single-crystal silicon induced by hydrogenation. Phys. Rev. B 35, 4166 (1987)
Leitch, A.W.R., Weber, J., Alex, V.: Formation of hydrogen molecules in crystalline silicon. Mat. Sci. and Eng. B 58, 6 (1999)
Paine, B.M., Hurvitz, N.N., Sperious, V.S.: Strain in GaAs by low-dose ion implantation. J. Appl. Phys. 61, 1335 (1987).
Tesmer, J.R., Nastasi, M. (eds.): Handbook of Modern Ion Beam Analysis. Materials Research Society, Pittsburgh, PA (1995)
Tkachev, V.D., Holzer, G., Chelyadinskii, A.R.: Damage profiles in ion implanted silicon. Phys. Stat. Sol. (a) 85, k43 (1984)
Van de Walle, C.G., Denteneer, P.J.H., Bar-Yam, Y., Pantelides, S.T.: Theory of hydrogen diffusion and reactions in crystalline silicon. Phys. Rev. B 39, 10791 (1989)
Van Wieringen, A., Warmoltz, N.: On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperatures. Physica 22, 849 (1956).
Volkert, C.A.: Stress and plastic flow in silicon during amorphization by ion bombardment. J. Appl. Phys. 70, 3521 (1991)
Weldon, M.K., Marsico, V.E., Chabal, Y.J., Agarwal, A., Eaglesham, D.J., Sapjeta, J., Brown, W.L., Jacobson, D.C., Caudano, Y., Christman, S.B., Chaban, E.E. On the mechanism of the hydrogen-induced exfoliation of silicon. J. Vac. Sci. Technol. B 15, 1065 (1997)
Rights and permissions
Copyright information
© 2006 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
(2006). Si Slicing and Layer Transfer: Ion-Cut. In: Ion Implantation and Synthesis of Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-45298-0_11
Download citation
DOI: https://doi.org/10.1007/978-3-540-45298-0_11
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-23674-0
Online ISBN: 978-3-540-45298-0
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)