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Domain Wall Formation in Ferromagnetic Layers: An Ab Initio Study

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Advances in Solid State Physics

Part of the book series: Advances in Solid State Physics ((ASSP,volume 46))

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Abstract

Domain walls are an inherent feature of ferromagnetic (FM) films consisting of layers with different magnetic orientations. Since FM films are used in electrical devices the question of the influence of domain walls on, e.g., the magnetoresistance has attracted much interest. Besides discussing the resistance contribution of domain walls, it is appropriate to study different types of domain walls and their energy of formation. The behaviour of domain walls is usually discussed within model calculations. In the present paper it is done within an ab initio Green’s function technique for layered systems, i.e., the fully relativistic, spin-polarized screened Korringa-Kohn Rostoker method. Results are presented for fcc Co layers covered by two semi-infinite fcc Pt(001) bulk systems or by bulk fcc Co(001), respectively. The resistance, which is caused by the different types of domain walls is discussed within a Kubo-Greenwood approach considering Co(001)/Co24/Co(001) as an example.

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Herper, H.C. (2008). Domain Wall Formation in Ferromagnetic Layers: An Ab Initio Study. In: Advances in Solid State Physics. Advances in Solid State Physics, vol 46. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-38235-5_20

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