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Physics of Semiconductor Devices pp 47–52Cite as

Advancements in SiC Power Devices Using Novel Interface Passivation Processes

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Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

For the next generation 4H-SiC MOSFET devices it is very critical to have a good 4H-SiC/SiO2 interface. In this paper we reported two new passivation processes - thin phosphorous (P) passivation and nitrogen plasma (N2P) passivation. With thin P passivation the mobility of ~75 cm2/V·s can be achieved with improved threshold voltage stability. N2P passivation gives an alternative to introduce nitrogen (N) at the interface in minimum oxygen (O) ambient during passivation. With this new N2P process we can introduce more N at the interface, almost two times compared to standard NO (nitric oxide) passivation.

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Acknowledgments

The authors would like to thank the U.S. Army Research Laboratory, the National Science Foundation, and the II-VI Foundation (Block Grant Program) for supporting this work.

Author information

Authors and Affiliations

  1. University of Warwick, Coventry, CV4 7AL, UK

    Y. K. Sharma, M. R. Jennings, C. Fisher, S. M. Thomas, L. Fan & P. Mawby

  2. Physics Department, Auburn University, Auburn, AL, 36849, USA

    A. C. Ahyi, T. Issacs-Smith, A. Modic, S. Dhar & J. R. Williams

  3. Department of Chemistry, Rutgers University, Piscataway, NJ, 08854, USA

    Y. Xu & E. Garfunkel

  4. IAMDN, Rutgers University, Piscataway, NJ, 08854, USA

    L. C. Feldman

Authors
  1. Y. K. Sharma
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  2. A. C. Ahyi
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  3. T. Issacs-Smith
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  4. A. Modic
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  5. Y. Xu
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  6. E. Garfunkel
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  7. M. R. Jennings
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  8. C. Fisher
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  9. S. M. Thomas
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  10. L. Fan
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  11. P. Mawby
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  12. S. Dhar
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  13. L. C. Feldman
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  14. J. R. Williams
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Corresponding author

Correspondence to Y. K. Sharma .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Cite this paper

Sharma, Y.K. et al. (2014). Advancements in SiC Power Devices Using Novel Interface Passivation Processes. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_12

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