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Physics of Semiconductor Devices pp 3–4Cite as

Co-existence of Multiferroic Memories in CoFe2O4/Bi3.4Sm0.6Ti3O12 Composite Structures

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Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

CoFe2O4/Bi3.4 Sm0.6Ti3O12/bilayer films were synthesized by chemical solution route and deposited by spin coating on Pt (Pt/TiO2/SiO2/Si) substrate. X-ray diffraction of the bilayer and multilayer structures revealed the composite-like structure. Dielectric spectroscopy shows relaxation in dielectric loss and reaches ~1 % at 106 Hz. CoFe2O4/Bi3.4Sm0.6Ti3O12 system shows the co-existence of ferroelectric polarization Pr > 40 μC/cm2 and magnetization Mr = 52 emu/cm3 for bilayer, and Pr = 60 μC/cm2 Mr = 72 emu/cm3, respectively, for four alternate layers, has been achieved at room temperature. Different permittivity and permeability may affects the coupling parameters may give rise to simultaneous ferromagnetic and ferroelectric responses.

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Acknowledgments

This work was supported by the DoE-EPSCoR grant No. DE-FG-02-08ER46526 at the University of Puerto Rico system, and we gratefully acknowledge it.

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Authors and Affiliations

  1. Department of Physics, University of Puerto Rico, Mayaguez, PR, 00681, USA

    A. Charris-Hernandez, A. Kumar & M. S. Tomar

Authors
  1. A. Charris-Hernandez
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  2. A. Kumar
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  3. M. S. Tomar
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Corresponding author

Correspondence to M. S. Tomar .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Charris-Hernandez, A., Kumar, A., Tomar, M.S. (2014). Co-existence of Multiferroic Memories in CoFe2O4/Bi3.4Sm0.6Ti3O12 Composite Structures. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_1

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