Abstract
The formation of anti-phase disorder during MOVPE growth of pseudomorphic GaP films on Si(100) substrates served as a lattice matched model system for the crucial III–V/Si(100) interface. A variety of surface-sensitive methods was applied to establish suitable Si(100) substrate preparation and subsequent GaP growth free of anti-phase domains (APDs), by analyzing the substrate surface, the interface and the epitaxial film resulting from the heteroepitaxial process. We studied thermal removal of native and protective wet-chemical SiO2 layers from Si(100) substrates in a MOVPE reactor by means of XPS and required annealing at a surface temperature of 950 °C for reliable deoxidation in a hydrogen ambient.
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Reference
T. Yasuda, D.E. Aspnes, D.R. Lee, C.H. Bjorkman, G. Lucovsky, J. Vac. Sci. Technol. A-Vac. Surf. Films 12, 1152–1157 (1994)
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© 2013 Springer International Publishing Switzerland
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Döscher, H. (2013). Conclusion. In: GaP Heteroepitaxy on Si(100). Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-02880-4_6
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DOI: https://doi.org/10.1007/978-3-319-02880-4_6
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