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GaP(100) and InP(100) Surfaces

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Book cover GaP Heteroepitaxy on Si(100)

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Abstract

Both GaP and InP have been important materials in electronic or optoelectronic applications for several decades. Recently, the GaP(100) surface has gained renewed attention as part of an almost lattice matched III–V compound on a silicon substrate, while InP(100) has been employed as a substrate material for a low-band gap tandem solar cell.

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  1. Institut für Physik, Technische Universität Ilmenau, Postfach 10 05 65, 98684, Ilmenau, Germany

    Henning Döscher

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  1. Henning Döscher
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Döscher, H. (2013). GaP(100) and InP(100) Surfaces. In: GaP Heteroepitaxy on Si(100). Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-02880-4_4

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