Abstract
The application of specifically designed metal-organic (MO) precursor molecules enables epitaxial growth of various materials, in particular of compound semiconductors, by chemical vapor deposition (CVD) processes. The required chemical elements for the formation of epitaxial layers are provided at the substrate surface by thermal decomposition (pyrolysis) of metal-organics or metal hydrides. In contrast to molecular beam epitaxy (MBE), the growth process is a chemical reaction under process gas flow at moderate pressure, and not physical deposition in ultra-high vacuum (UHV). Due to advantages such as industrial scalability, reliable process control and established preparation of phosphorus containing III–V compounds, MOVPE has become the dominant process for the manufacture of laser diodes, multi-junction solar cells, and LEDs.
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Döscher, H. (2013). Experimental. In: GaP Heteroepitaxy on Si(100). Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-02880-4_2
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