Abstract
In this chapter, we study the DSL in nipi structures of non-linear optical, III–V, II–VI, IV–VI and stressed semiconductors on the basis of newly formulated electron statistics in each case. It has been observed that the inverse DSL increases with increasing surface electron concentration. In this simplified analysis we have investigated the DSLin the electric quantum limit and the Sect. 2.3 contains 11 open research problems.
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References
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S. Mukherjee, S.N. Mitra, P.K. Bose, A.R. Ghatak, A. Neoigi, J.P. Banerjee, A. Sinha, M. Pal, S. Bhattacharya, K.P. Ghatak, J. Compu, Theor. Nanosc. 4, 550 (2007)
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Ghatak, K.P., Bhattacharya, S. (2014). The DSL in NIPI Structures of Non-Parabolic Semiconductors. In: Debye Screening Length. Springer Tracts in Modern Physics, vol 255. Springer, Cham. https://doi.org/10.1007/978-3-319-01339-8_2
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DOI: https://doi.org/10.1007/978-3-319-01339-8_2
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