Skip to main content
SpringerLink
Log in
Book cover

Proceedings of the 35th International MATADOR Conference pp 25–28Cite as

The Mechanism of Amorphous Silicon Thin Films Using XeF Excimer Laser Crystallization

  • Conference paper

Abstract

Melting and recrystallization phenomena of plasma-enhanced chemical vapor deposition (PECVD) of amorphous silicon (a-Si) thin films for both frontside and backside excimer laser crystallization (ELC) have been investigated by in-situ realtime optical reflectivity and transmissivity (TRORT) measurements with nanosecond time resolution. The longest melt-phase duration of 90-nm-thick a-Si thin films for both frontside and backside ELC is 350 ns. The ablation excimer laser fluence of a-Si thin films for frontside ELC is higher than that of backside ELC because SiO2 films show anti-reflectivity for excimer laser beam. TRORT measurements reveal that the solidification direction of molten Si for both frontside and backside ELC start from the interface of the sample and the recrystallization mechanism for both frontside and backside ELC are the same.

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD   219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Y. F. Chong, K. L. Pey, A. T. S. Wee, M. O. Thompson, C. H. Tung, and A. See, Appl. Phys. Lett. 81(2002)3786.

    Article  Google Scholar 

  2. G. E. Jellison, Jr. and D.H. Lowndes, Appl. Phys. Lett. 47 (1985) 718.

    Article  Google Scholar 

  3. C. C. Kuo, W. C. Yeh, C. B. Chen, and J. Y. Jeng, Thin Solid Films 515 (2006) 1651.

    Article  Google Scholar 

  4. C. C. Kuo, W. C. Yeh, C. B. Chen, and J. Y. Jeng, Mat. Sci. Forum 505 (2006) 337.

    Article  Google Scholar 

  5. G. E. Jellison, Jr. and D.H. Lowndes, J. Appl. Phys. 60 (1986) 841.

    Article  Google Scholar 

  6. H.J. Kim and J. S. Im, Appl. Phys. Lett. 68 (1996) 1513.

    Article  Google Scholar 

  7. J. Siegel, J. Solis, and C. N. Afonso, Appl. Phys. Lett. 75 (1999) 1071.

    Article  Google Scholar 

  8. M. O. Thompson, G. J. Galvin, and J. W. Mayer, Phys. Rev. Lett. 52 (1984) 2360.

    Article  Google Scholar 

  9. G. Aichmayr, D. Toet, M. Mulato, P.V. Santos, A. Spangenberg, and R. B. Bergmann, J. Non-Cryst. Solids 227(1998) 921.

    Article  Google Scholar 

  10. J. S. Im, H. J. Kim, and M. O. Thompson, Appl. Phys. Lett. 63 (1993) 1969.

    Article  Google Scholar 

  11. J. P. Leonard and J. S. Im, Appl. Phys. Lett. 78 (2001) 3454.

    Article  Google Scholar 

  12. S. R. Stiffler, M. O. Thompson, and P. S. Peercy, Phys. Rev. B 43 (1991) 9851.

    Article  Google Scholar 

  13. J. S. Im and H. J. Kim, Appl. Phys. Lett. 64 (1994) 2303.

    Article  Google Scholar 

  14. M. Hatano, S. Moon, M. Lee, K. Suzuki, and C. P. Grigoropoulos, J. Non-Cryst. Solids 266 (2000) 654.

    Article  Google Scholar 

  15. W. C. Yeh and M. Matsumura, Jpn. J. Appl. Phys. 41 (2002)1909.

    Article  Google Scholar 

  16. R. Ishihara, A. Burtsev, and P.F.A. Alkemade, Jpn. J. Appl. Phys. 39 (2000) 3872.

    Article  Google Scholar 

  17. D. Pribat, P. Legagneux, C. Collet, F. Plais, and O. Huet, C. Reita, Proceedings of the Active-Matrix Liquid-Crystal Displays(AM-LCD), Tokyo, Japan, July 9–10, 1999, p.9.

    Google Scholar 

  18. C. C. Kuo, W. C. Yeh, C. B. Chen, and J. Y. Jeng, Proceedings of 2005 IEEE/ASME International Conference on Advanced Manufacture, Taipei, Taiwan R. O. C., November 28–December 2, 2005, p.337.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan

    C. C. Kuo, C. P. Hsiao & J. Y. Jeng

  2. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan

    W. C. Yeh

  3. Department of Mechanical Engineering, Mingchi University of Technology, Taipei Hsien, Taiwan

    C. C. Kuo

Authors
  1. C. C. Kuo
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. W. C. Yeh
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. C. P. Hsiao
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. Y. Jeng
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Sackville Street, Manchester, M60 1QD, UK

    Srichand Hinduja PhD

  2. Department of Mechanical Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Rd., Taipei, 10627, Taiwan ROC

    Kuang-Chao Fan PhD

Rights and permissions

Reprints and permissions

Copyright information

© 2007 Springer-Verlag London Limited

About this paper

Cite this paper

Kuo, C.C., Yeh, W.C., Hsiao, C.P., Jeng, J.Y. (2007). The Mechanism of Amorphous Silicon Thin Films Using XeF Excimer Laser Crystallization. In: Hinduja, S., Fan, KC. (eds) Proceedings of the 35th International MATADOR Conference. Springer, London. https://doi.org/10.1007/978-1-84628-988-0_6

Download citation

  • DOI: https://doi.org/10.1007/978-1-84628-988-0_6

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-84628-987-3

  • Online ISBN: 978-1-84628-988-0

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics

Search

Navigation