Abstract
The current vs. voltage characteristic of boron makes it possible to produce simple boron semiconductor devices which in principle act as contactless switches. The switching operation can be triggered by varying the current through the boron, the temperature of the boron, or the ambient temperature. Measurements of the current vs. voltage characteristic are reported. These characteristics and the possible operating points are also calculated under the assumption of a pure temperature effect. Various examples of circuits employing boron semiconductor devices are given.
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© 1965 Springer Science+Business Media New York
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Dietz, W., Helmberger, H. (1965). Boron Semiconductor Devices. In: Gaulé, G.K. (eds) Boron. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6574-5_24
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DOI: https://doi.org/10.1007/978-1-4899-6574-5_24
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-6266-9
Online ISBN: 978-1-4899-6574-5
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