Abstract
Stacked layers of polycrystalline silicon (polysilicon) are widely applied to VLSI-processing, such as dynamic RAM’s, EPROM’s, etc. In these structures, the polysilicon layers are isolated from each other by thin oxide (SiO2) films. In general, the oxide is thermally grown on the bottom polysilicon layer.
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© 1993 Springer Science+Business Media New York
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Reiche, M. (1993). Tem Investigations of the Oxidation Kinetics of Amorphous Silicon Films. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1588-7_13
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DOI: https://doi.org/10.1007/978-1-4899-1588-7_13
Publisher Name: Springer, Boston, MA
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Online ISBN: 978-1-4899-1588-7
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