Abstract
It has been suggested by numerous workers over the years that multiple mechanisms acting in parallel might be responsible for the growth of thermal oxides on silicon. The most obvious example of such an effect is oxidation in “wet” O2 where both H2O and O2 act in parallel to oxidize the silicon. In this paper these models will be reviewed in light of more recent data, and suggest a new model based on a combination of these mechanisms.
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© 1988 Springer Science+Business Media New York
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Helms, C.R., de Larios, J. (1988). Silicon Oxidation Models Based on Parallel Mechanisms. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_3
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_3
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